Multi-Directional Interconnection Structure Single Gap-Fill Process
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Solution Overview
Problem
The increasing integration of semiconductor devices requires more efficient interconnection routing, which existing technologies have not adequately addressed, leading to complexity in semiconductor processing.
Innovation Solution
A multi-layer interconnection structure is formed with interconnections extending in various directions, where at least two layers are in direct contact, and simultaneously fabricated through a single gap-fill process, simplifying semiconductor processing and improving integration.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If multiple separate gap-fill processes are used to form interconnections in different directions, then manufacturing precision may be improved, but device complexity and processing time increase
Solution Approach 1:
The patent combines multiple interconnection formation operations into a single gap-fill process. Trenches extending in different directions (first direction and second direction) are formed and filled simultaneously with conductive material in one process step, eliminating the need for separate gap-fill processes for each interconnection layer. This merging approach reduces processing complexity while maintaining manufacturing precision through direct contact between interconnections formed in different directions.
2Manufacturing precision
If multiple separate gap-fill processes are used to form interconnections in different directions, then manufacturing precision may be improved, but productivity decreases
Solution Approach 1:
The patent merges multiple interconnection formation operations into a single gap-fill process. By forming trenches in different directions and filling them simultaneously with conductive material in one process step, the manufacturing method improves productivity by eliminating repeated processing cycles while maintaining precision through the direct contact design of interconnections formed in different directions.
3Adaptability or versatility
If interconnections are formed in various directions to improve integration degree, then device functionality improves, but processing complexity increases
Solution Approach 1:
The patent achieves high integration degree by forming interconnections in various directions (first direction and second direction) within a single gap-fill process. This merging approach allows versatile routing capabilities for connecting semiconductor elements while avoiding the processing complexity that would result from multiple separate formation processes.
Solution Approach 2:
The patent utilizes multi-dimensional trench arrangements by forming trenches extending in different directions (first direction and second direction) that intersect or cross each other. This dimensional approach allows interconnections to route in multiple directions within the same process step, improving integration degree without proportionally increasing processing complexity.
Data Source
AI summary
Various embodiments of the present disclosure improve integration degree of semiconductor devices by simultaneously forming interconnections extending in various directions through a single gap-fill process. The embodiments of the present invention provide an interconnection structure that is capable of simplifying semiconductor processing, a semiconductor device including the interconnection structure, and a method for fabricating the semiconductor device. According to an embodiment of the present disclosure, an interconnection structure comprises: a stack of a plurality of interconnections, wherein at least two layers of the plurality of interconnections extend in different directions, and a portion of a top surface of a lower interconnection of the at least two layers is in direct contact with a portion of a bottom surface of an upper interconnection of the at least two layers.