Multi-Dopant Silicon Oxide Films for Dense Vertical IC Structures
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Solution Overview
Problem
The challenge in manufacturing integrated circuit devices is to maintain electrical characteristics and reliability while reducing pitches and increasing aspect ratios, as existing methods face difficulties in forming silicon oxide films with desired insulating characteristics and doping multiple dopant elements effectively.
Innovation Solution
A method involving the formation of a doped silicon oxide film using a silicon precursor with Si—H functional groups and C1-C10 oxy or organoamino groups, followed by dry-etching to create vertical structures, allowing for simultaneous doping of multiple dopant elements and improved etch rates, thereby addressing the limitations of traditional silicon oxide film formation techniques.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If traditional silicon oxide film formation techniques are used, then the manufacturing process is simple, but the insulating characteristics and doping effectiveness deteriorate at high integration densities
Solution Approach 1:
The patent changes the chemical parameters of the silicon precursor by introducing specific functional groups (Si-H, C1-C10 oxy groups, C1-C10 organoamino groups) to improve insulating characteristics and doping effectiveness while maintaining processability. This resolves the contradiction by modifying material composition rather than process complexity.
Solution Approach 2:
The patent uses composite dopant sources containing multiple dopant elements (e.g., phosphorus and boron, or phosphorus and nitrogen) in a single film formation process. This achieves superior insulating characteristics and electrical properties through material composition rather than multiple processing steps.
2Manufacturing precision
If multiple dopant elements are doped separately, then doping precision is improved, but manufacturing time and process complexity increase
Solution Approach 1:
The patent combines multiple dopant elements (at least two different dopant elements) into a single doped silicon oxide film formation process using composite dopant sources. This achieves precise doping control for multiple elements simultaneously, eliminating the need for separate doping steps and thereby maintaining manufacturing precision while improving productivity.
Solution Approach 2:
The silicon precursor with specific functional groups serves multiple functions: it provides the silicon oxide matrix, enables incorporation of multiple dopant elements, and ensures proper film formation characteristics. This multi-functionality allows precise doping of multiple elements in a single step, resolving the contradiction between doping precision and manufacturing time.
3Productivity
If pitch is reduced for higher integration, then device density is improved, but electrical characteristics and reliability deteriorate
Solution Approach 1:
The patent changes the chemical composition parameters of the silicon oxide film by using precursors with specific functional groups and incorporating multiple dopant elements. This improves electrical characteristics and reliability at reduced pitches by optimizing the film's physical and electrical properties rather than changing device geometry.
Solution Approach 2:
The use of composite dopant sources with multiple dopant elements creates a doped silicon oxide film with superior electrical characteristics and insulating properties. This composite material approach maintains reliability at high integration densities by providing tailored electrical properties through material composition rather than increased device size.
4Manufacturing precision
If conventional dopant sources are used, then process simplicity is maintained, but step coverage and mechanical properties deteriorate
Solution Approach 1:
The patent modifies the molecular structure parameters of the silicon precursor by introducing specific functional groups (Si-H, C1-C10 oxy groups, C1-C10 organoamino groups). These structural changes improve step coverage and mechanical properties of the film while maintaining process simplicity through single-step deposition.
Solution Approach 2:
The composite dopant sources containing multiple dopant elements and the silicon precursor with multiple functional groups work together to achieve superior step coverage and mechanical properties. The complex precursor structure enables precise control of film formation and doping simultaneously, resolving the contradiction between manufacturing precision and device complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables the efficient formation of doped silicon oxide films with enhanced step coverage and mechanical properties, improving the operational characteristics of integrated circuit devices by allowing for precise control of dopant elements and maintaining insulating characteristics, even at high integration densities.
Implementation Method 1
forming a doped silicon oxide film on a substrate by supplying, onto the substrate, a silicon precursor, an oxidant, and at least two dopant sources
Implementation Method 2
forming a vertical hole in the doped silicon oxide film by dry-etching the doped silicon oxide film
Data Source
AI summary
A method of manufacturing an integrated circuit device, the method including forming a doped silicon oxide film on a substrate by supplying, onto the substrate, a silicon precursor, an oxidant, and at least two dopant sources including dopant elements that are different from each other such that the doped silicon oxide film includes at least two dopant elements; forming a vertical hole in the doped silicon oxide film by dry-etching the doped silicon oxide film; and forming a vertical structure in the vertical hole, wherein the silicon precursor includes a monosilane compound, a disilane compound, a siloxane compound, or a combination thereof, and the silicon precursor includes a Si—H functional group, and a C1-C10 oxy group or a C1-C10 organoamino group.