Multi-Drain GaN Module Series Switch Driver
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Solution Overview
Problem
Current gallium nitride (GaN) High Electron Mobility Transistors (HEMTs) have low breakdown voltage, limiting their utilization in high-voltage applications due to the lack of efficient and compact GaN transistors with high voltage ratings.
Innovation Solution
The development of multi-drain power modules comprising multiple GaN transistor dies connected in series with exposed drain terminals, allowing for multiple voltage ratings and optimized on-resistance (Ron) selection to minimize conduction losses, utilizing a series-switch-driver (SSD) circuit for gate control and Ferrite Beads (FB) for filtering high-frequency oscillations.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Loss of energy
If GaN HEMTs are used to reduce conduction and switching losses, then efficiency is improved, but breakdown voltage is limited to low-voltage applications
Solution Approach 1:
The invention divides a single high-voltage transistor function into multiple low-voltage GaN HEMT devices connected in series. Each HEMT operates at its optimal low-voltage breakdown rating (e.g., 650V), while the series combination achieves the required high-voltage rating (e.g., 3.3kV). This segmentation allows each device to operate in its efficient region while collectively achieving high-voltage capability.
Solution Approach 2:
Multiple GaN HEMT devices are merged in series within a single integrated module package. The series connection of multiple low-voltage devices creates an equivalent high-voltage transistor with combined breakdown voltage equal to the sum of individual device ratings. This merging enables high-voltage operation while maintaining the efficiency benefits of GaN technology.
2Reliability
If multiple GaN transistor dies are connected in series to achieve high voltage ratings, then voltage capability is improved, but device complexity increases
Solution Approach 1:
Multiple GaN transistor dies, series-switch-driver circuitry, ferrite beads, and packaging are merged into a single integrated module. This consolidation simplifies the overall system architecture by eliminating the need for external discrete components and interconnections, reducing system-level complexity despite the increased internal integration.
Solution Approach 2:
The integrated module serves multiple functions simultaneously: it provides high-voltage switching capability, includes gate drive circuitry for multiple devices, incorporates EMI filtering through ferrite beads, and provides thermal management and mechanical support through the package. This multi-functionality reduces the need for separate components and simplifies system design.
3Loss of energy
If GaN HEMTs with lower on resistance are used, then conduction losses are reduced, but breakdown voltage capability is limited
Solution Approach 1:
The high-voltage blocking function is segmented across multiple devices in series, while each individual device maintains its low on-resistance characteristic optimized for low-voltage operation. The total on-resistance of the series combination is the sum of individual resistances, which remains lower than equivalent high-voltage devices due to the superior material properties of GaN at lower voltage ratings.
Solution Approach 2:
The invention changes the operating parameters of multiple devices from individual high-voltage operation to series-connected low-voltage operation. Each device operates at its optimal voltage and resistance parameters, while the series combination achieves the required voltage rating. This parameter transformation allows exploitation of GaN's low on-resistance特性 at each device level.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enables the creation of high-voltage GaN transistors with multiple voltage ratings, reducing conduction losses and power electronics designers can select the optimal configuration for voltage and Ron, enhancing efficiency and adaptability in various power electronics systems.
Implementation Method 1
a first Ferrite Bead (FB) connected between a first gate intermediate terminal and the first gate
Implementation Method 2
a first Ferrite Bead (FB) connected between a first gate intermediate terminal and the first gate
Data Source
AI summary
A multi-drain power module can include: a plurality of gallium-nitride (GaN) transistor dies connected to each other in series; a plurality of drain terminals, each drain terminal being respectively connected to the drain of a GaN transistor die; a series-switch-driver (SSD) connected to the gate of each GaN transistor die; a gate terminal connected to the SSD; a source terminal connected to a first source of a first GaN transistor die of the plurality of GaN transistor dies; a package encapsulating the plurality of GaN transistor dies and the SSD, and exposing the plurality of drain terminals, the gate terminal, and the source terminal.