Multi-Edge Corner Rounding OPC for Single-Mask Semiconductor Patterning

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Solution Overview

Problem

Existing optical proximity correction (OPC) methods face challenges in overcoming the diffraction limit of beams and increasing process costs due to the use of multiple masks or inverse lithography techniques, which can lead to pattern defects and reduced diffraction efficiency.

Innovation Solution

A method involving multi-edge corner rounding OPC (ME-CROPC) is employed to select specific targets within rectangular patterns, performing corner chopping and edge placement error calculations to minimize mask rule check violations, thereby using a single mask for efficient patterning.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Manufacturing precision

If multiple masks or inverse lithography techniques are used to overcome the diffraction limit, then pattern transfer accuracy is improved, but process costs increase

Engineering Contradiction:

Improvepattern transfer accuracyVSAvoidprocess cost

Core Design Contradiction:

Manufacturing precisionVSEase of manufacture

Solution Approach 1:

The patent changes the geometric parameters of the mask pattern by introducing multi-edge corner rounding with specific radius values (e.g., 50nm, 100nm) to optimize diffraction efficiency. This parameter optimization allows single-mask patterning to achieve accuracy previously requiring multiple masks, thereby reducing process costs while maintaining pattern transfer accuracy

Inventive Principle:

Principle #35Parameter changes

Solution Approach 2:

The patent applies corner rounding to rectangular patterns, transforming sharp corners into curved edges with specified radii. This curvature modification improves diffraction efficiency and enables accurate pattern transfer using a single mask, avoiding the need for multiple masks or complex inverse lithography techniques

Inventive Principle:

Principle #14Spheroidality (Curvature)

2Use of energy by moving object

If multiple masks or inverse lithography techniques are used to overcome the diffraction limit, then diffraction efficiency is improved, but pattern defects increase

Engineering Contradiction:

Improvediffraction efficiencyVSAvoidpattern defect rate

Core Design Contradiction:

Use of energy by moving objectVSReliability

Solution Approach 1:

The patent optimizes the corner rounding radius parameter to specific values (50nm, 100nm) that maximize diffraction efficiency while maintaining pattern integrity. This precise parameter control ensures high diffraction efficiency is achieved without introducing pattern defects that might arise from excessive or insufficient rounding

Inventive Principle:

Principle #35Parameter changes

Solution Approach 2:

The patent enables direct single-mask patterning by skipping the intermediate steps of multiple mask alignments and inverse lithography calculations. This streamlined approach maintains high diffraction efficiency while eliminating the pattern defects that arise from multiple processing steps and alignments

Inventive Principle:

Principle #21Skipping (Rushing through)

3Ease of manufacture

If conventional OPC shapes are used, then manufacturing simplicity is maintained, but diffraction efficiency is limited

Engineering Contradiction:

Improvemanufacturing simplicityVSAvoiddiffraction efficiency

Core Design Contradiction:

Ease of manufactureVSUse of energy by moving object

Solution Approach 1:

The patent introduces multi-edge corner rounding with specific radius values to conventional rectangular patterns. This maintains the overall simplicity of rectangular pattern manufacturing while adding curved corners that significantly improve diffraction efficiency, combining ease of manufacture with enhanced optical performance

Inventive Principle:

Principle #14Spheroidality (Curvature)

4Use of energy by moving object

If multi-edge corner rounding OPC is applied to all rectangular patterns, then diffraction efficiency is maximized, but mask rule check violations increase

Engineering Contradiction:

Improvediffraction efficiencyVSAvoidmask rule compliance

Core Design Contradiction:

Use of energy by moving objectVSManufacturing precision

Solution Approach 1:

The patent applies corner rounding with different radius values to different locations on the mask. Specific patterns receive 50nm rounding while others receive 100nm rounding, allowing optimization of diffraction efficiency locally while maintaining overall mask rule compliance. This selective application prevents MRC violations that would occur with uniform aggressive rounding

Inventive Principle:

Principle #3Local quality

Data Source

PatentUS12393123B2Optical proximity correction method, mask manufacturing method and semiconductor chip manufacturing method using the same

Publication Date: 2025.08.19 SAMSUNG ELECTRONICS CO LTD

AI summary

A method of manufacturing a semiconductor chip includes designing a layout for a semiconductor chip, performing an optical proximity correction (OPC) on the layout, manufacturing a mask after performing the OPC, and manufacturing the semiconductor chip using the mask, wherein a plurality of OPC shapes corresponding to a rectangular pattern of the mask are included in the mask and at least one of the plurality of OPC shapes includes a multi-edge corner rounding OPC shape.