Multi-Electrode Plasma Layout for Uniform Low-Temperature Deposition
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Solution Overview
Problem
As semiconductor device manufacturing progresses towards lower temperature substrate processing, existing technologies face challenges in uniformly processing films due to increased high-frequency power requirements, which can lead to non-uniform film deposition and particle generation.
Innovation Solution
A substrate processing apparatus with an odd number of electrodes, where one electrode is grounded and shared by adjacent high-frequency power-supplied electrodes, is used to generate plasma in a buffer chamber, enhancing the uniformity of film deposition and reducing particle generation by optimizing electrode configuration and plasma generation regions.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Temperature
If high-frequency power is increased to enable lower temperature substrate processing, then substrate processing temperature is reduced, but film deposition uniformity deteriorates
Solution Approach 1:
The substrate processing chamber is divided into multiple plasma generation regions by segmenting the electrode system into three or more electrodes arranged in alternating positive and negative polarity. This segmentation allows independent control of plasma generation in different spatial zones, enabling uniform film deposition across the substrate surface even at lower temperatures where plasma generation is less efficient.
Solution Approach 2:
Adjacent electrodes of opposite polarity are merged to form common plasma generation regions, where the electric field between positive and negative electrodes creates plasma that supplies active species to the substrate. This merging approach concentrates plasma generation in specific zones while maintaining overall uniformity across the substrate surface.
2Temperature
If high-frequency power is increased to maintain film deposition at lower temperatures, then substrate processing temperature is reduced, but particle generation increases
Solution Approach 1:
By segmenting the plasma generation into multiple localized regions between adjacent electrodes, the overall high-frequency power requirement is distributed across multiple zones rather than concentrated in a single region. This reduces localized overheating and particle generation while maintaining sufficient plasma activity for low-temperature processing.
Solution Approach 2:
Different regions of the substrate surface receive plasma from different electrode pairs, allowing local optimization of plasma generation conditions. Each local plasma region can be independently controlled to provide appropriate active species flux without excessive power that would generate particles, while maintaining uniform coverage across the entire substrate.
3Manufacturing precision
If multiple electrodes are added to improve plasma generation uniformity, then film deposition uniformity is improved, but device complexity increases
Solution Approach 1:
Each electrode in the alternating polarity arrangement serves multiple functions: it generates plasma with adjacent electrodes of opposite polarity, defines plasma generation region boundaries, and contributes to the overall electric field distribution. This multi-functionality reduces the need for additional specialized components, offsetting the complexity increase from adding multiple electrodes.
Solution Approach 2:
The alternating positive and negative electrode arrangement creates a symmetric electric field pattern that produces equipotential regions between adjacent electrodes. This symmetry simplifies the control strategy compared to asymmetric multi-electrode configurations, as all electrode pairs operate under similar conditions, reducing the complexity of power supply control and electrode bias management.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration allows for improved in-plane uniformity of film thickness and increased throughput by efficiently supplying active species to the wafer surface, while reducing particle generation and installation space requirements.
Implementation Method 1
a precursor gas and a reaction gas supplied into the process chamber are activated using plasma
Implementation Method 2
increasing high-frequency power serving as a plasma source
Data Source
AI summary
There is provided a plasma generating device that includes a first electrode connected to a high-frequency power supply, and a second electrode to be grounded, a buffer structure configured to form a buffer chamber that accommodates the first and second electrodes wherein the first electrode and the second electrode are alternately arranged such that a number of electrodes of the first electrode and the second electrode are in an odd number of three or more in total, and wherein the second electrode is used in common for two of the first electrode being respectively adjacent to the second electrode used in common, and wherein a gas supply port that supplies gas into a process chamber is installed on a wall surface of the buffer structure.