Multi-Electrode Substrate Support for Plasma Phase Control
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Solution Overview
Problem
In semiconductor manufacturing, achieving stable and repeatable device performance is hindered by chamber asymmetries and the need for precise control of process uniformity, particularly at the substrate edge where electromagnetic fields and plasma density change due to multiple material interfaces and geometric shapes.
Innovation Solution
A substrate support assembly with multiple electrodes and a power application system that allows for the tuning of plasma by adjusting radio frequency power and phase, enabling controlled plasma distribution and density across the substrate.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If chamber asymmetries such as temperature, flow conductance, and RF fields are present, then device performance becomes difficult to control, but adding multiple electrodes and phase control systems increases device complexity
Solution Approach 1:
The substrate support assembly is divided into multiple independent electrodes (first electrode adjacent to substrate support surface, second electrode at location further from support surface). Each electrode can be controlled independently through separate RF power sources, allowing localized process tuning at different regions of the substrate to compensate for chamber asymmetries while maintaining overall critical dimension control.
Solution Approach 2:
The system implements dynamic phase control capability where the phase of RF power supplied to different electrodes can be adjusted independently. This allows real-time adaptation to chamber asymmetries and enables fine-tuned control of plasma distribution across the substrate, improving manufacturing precision without requiring a completely static complex structure.
2Manufacturing precision
If multiple electrodes with phase control are added to tune plasma, then plasma uniformity and density control improve, but device complexity increases
Solution Approach 1:
The power application system is segmented into multiple independent RF power sources, each connected to specific electrodes. This modular approach allows independent control of plasma parameters at different locations, improving process uniformity while keeping each power source relatively simple rather than requiring one complex centralized controller.
Solution Approach 2:
The system controls plasma characteristics by changing multiple parameters including RF power levels and phase angles supplied to different electrodes. This multi-parameter control approach enables fine-tuned adjustment of plasma uniformity and density without requiring overly complex hardware, as the complexity is managed through parameter optimization rather than structural complexity.
3Manufacturing precision
If RF power is adjusted to control plasma at substrate edge, then critical dimension uniformity improves, but energy consumption increases
Solution Approach 1:
RF power is applied locally to specific electrodes based on the spatial requirements of the substrate. The first electrode adjacent to the substrate support surface and the second electrode at a different location can receive different RF power levels tailored to local plasma needs. This localized power application achieves critical dimension uniformity across the substrate while minimizing overall energy consumption by avoiding uniform high-power application everywhere.
Solution Approach 2:
The system applies RF power selectively to specific electrodes and regions rather than uniformly across the entire substrate. By applying partial power to specific areas where plasma tuning is needed (such as substrate edges with multiple material interfaces), the system achieves the required critical dimension uniformity without the excessive energy consumption that would result from uniform high-power application across all regions.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This solution enhances process tuning capabilities, allowing for precise control of plasma uniformity and density, improving etch rate uniformity and critical dimension control across the substrate.
Implementation Method 1
providing a first radio frequency power and a direct current power to a first electrode adjacent to a substrate support surface of a substrate support assembly, providing a second radio frequency power to a second electrode in the substrate support assembly
Data Source
AI summary
Implementations described herein provide a substrate support assembly which enables tuning of a plasma within a plasma chamber. In one embodiment, a method for tuning a plasma in a chamber is provided. The method includes providing a first radio frequency power and a direct current power to a first electrode in a substrate support assembly, providing a second radio frequency power to a second electrode in the substrate support assembly at a different location than the first electrode, monitoring parameters of the first and second radio frequency power, and adjusting one or both of the first and second radio frequency power based on the monitored parameters.