Multi-Emitter Semiconductor Chip With Recess-Tuned Wavelength Control
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Solution Overview
Problem
Existing light-emitting semiconductor chips with multiple emitters face challenges in achieving shifted emission wavelengths while maintaining comparable operating parameters, leading to undesirable variations in laser parameters such as threshold, slope, and operation current.
Innovation Solution
A light-emitting semiconductor chip with multiple emitter units, where each emitter unit has a recess with varying widths to achieve wavelength-dependent reflectivity, allowing for emission wavelength shifts without altering the operating parameters, achieved through a semiconductor body with epitaxially grown layers and strategically designed coatings.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If the laser geometry is varied to achieve wavelength shifts, then emission wavelengths are shifted, but laser parameters such as threshold, slope, and operation current change
Solution Approach 1:
The patent applies local quality by introducing strain-changing structures at specific locations within the semiconductor body. These structures are positioned in the waveguide region to locally modify the refractive index and achieve wavelength shifts without affecting the overall laser parameters. The localized nature of these structures ensures that only the emission wavelength changes while threshold, slope, and operation current remain comparable across different emitter units.
2Adaptability or versatility
If multiple-epitaxy is used to produce emitters with different wavelengths, then emission wavelengths are shifted, but technical effort and cost increase
Solution Approach 1:
The patent segments the wavelength tuning function from the epitaxy process. Instead of using multiple-epitaxy to achieve different wavelengths, the invention uses a single epitaxy process to create identical emitter units, then applies separate strain-changing structures to each emitter's waveguide region. This segmentation allows wavelength differentiation without requiring complex multi-epitaxy procedures, thereby reducing manufacturing complexity and cost.
3Adaptability or versatility
If strain-changing structures are added to the wafer, then locally different wavelengths are formed, but additional space is required and far-field width is affected
Solution Approach 1:
The patent transitions the wavelength control mechanism from the lateral dimension to the vertical dimension. Instead of placing strain-changing structures that extend laterally across the chip surface, the invention introduces these structures within the vertical stack of the semiconductor body, specifically in the waveguide region beneath the active region. This vertical integration allows wavelength differentiation without consuming additional lateral chip space and maintains far-field width characteristics.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This solution enables efficient variation of emission wavelengths across emitter units while maintaining consistent operating parameters, improving image quality in applications like AR/VR and allowing for low-cost, high-yield manufacturing.
Implementation Method 1
The active region of each of the at least one emitter unit is arranged in a resonator. The resonator is configured in particular to amplify the light generated in the active region.
Implementation Method 2
each emitter unit has a recess with varying widths to achieve wavelength-dependent reflectivity, allowing for emission wavelength shifts without altering the operating parameters
Data Source
AI summary
In an embodiment a light-emitting semiconductor chip includes a semiconductor body having a plurality of emitter units, wherein each emitter unit has an active region which is arranged in a resonator having an outcoupling side and a rear side and which is configured to emit light at the outcoupling side along a radiation emission direction, wherein, in each emitter unit, the active region is completely penetrated by at least one recess in the semiconductor body, wherein, in each emitter unit, in a region of the active region the recess has a recess width measured along the radiation emission direction, and wherein recess widths of the emitter units are at least partially different.