Multi-etch Process Modeling for Semiconductor Virtual Fabrication
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Solution Overview
Problem
The increasing complexity of semiconductor fabrication processes, particularly at advanced technology nodes, leads to high costs and long durations in developing new processes due to the inefficiencies of conventional trial-and-error methods and existing CAD and TCAD tools, which struggle to model the entire integrated process flow and predict structural failures effectively.
Innovation Solution
A virtual fabrication environment is enhanced with multi-etch process modeling that simulates etch operations using material-specific behavioral parameters, enabling a semi-physical approach to simulate multi-material etches, thereby predicting a wide range of physical etch behaviors and resultant structures, and providing a platform for faster and more economical semiconductor device structure development.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If trial-and-error experimental methodology is used to develop fabrication processes, then process development can be performed with existing tools, but the cost and duration increase significantly due to multiple experimental runs
Solution Approach 1:
The patent applies preliminary action by performing virtual fabrication simulations before actual physical fabrication. The system models the integrated process flow and predicts structural outcomes in advance, allowing process developers to identify potential failures and optimize parameters before committing to expensive experimental runs, thereby reducing both time and cost while maintaining reliability
Solution Approach 2:
The patent creates a virtual copy of the fabrication process and physical structures through computational modeling. This virtual model replicates the behavior of actual fabrication processes and materials, enabling repeated experimentation on the digital twin without consuming physical resources, thus eliminating the need for multiple trial-and-error physical runs
2Measurement precision
If TCAD tools are used to model semiconductor device structures, then physics-based simulations can be performed, but the scope is restricted to very small regions due to computational requirements
Solution Approach 1:
The patent segments the simulation approach by combining physics-based models for material composition changes with geometric modeling for structural prediction. This hybrid methodology allows physics-based accuracy to be applied where needed while using faster geometric operations for the overall process flow modeling, enabling larger area simulations that TCAD alone cannot achieve
Solution Approach 2:
The patent creates a universal modeling platform that integrates multiple modeling approaches (physics-based TCAD, geometric modeling, and process simulation) into a single system. This multi-functional platform can handle both small-scale physics-critical regions and large-scale integration challenges, overcoming the area limitation of traditional TCAD tools
3Ease of operation
If conventional mechanical CAD tools are used for modeling, then general-purpose design can be performed, but they cannot automatically mimic material addition, removal, and modification processes
Solution Approach 1:
The patent introduces an intermediary layer between mechanical CAD and physical fabrication by implementing a virtual fabrication environment that translates design intentions into predicted process outcomes. This intermediary system incorporates knowledge of material behavior and process physics to bridge the gap between simple geometric CAD tools and complex physical processes, maintaining ease of operation while improving prediction reliability
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach allows for faster verification of process assumptions, visualization of complex interrelationships, and prediction of entire 3D structures, significantly reducing the time and cost associated with semiconductor device development by simulating multiple processes and materials within a virtual environment.
Implementation Method 1
A computing device-implemented method for simulating plasma etches on a 3D structural model of a semiconductor device
Implementation Method 2
receiving a set of material-specific behavioral parameters for multiple types of etch behavior to be respectively applied to multiple etchable materials
Implementation Method 3
At least one of the types of etch behavior is taper behavior caused by a combination of directional etching and polymer deposition
Data Source
AI summary
A virtual fabrication environment for semiconductor device structure development is discussed. The insertion of a multi-etch process step using material-specific behavioral parameters into a process sequence enables a multi-physics, multi-material etching process to be simulated using a suitable numerical technique. The multi-etch process step accurately and realistically captures a wide range of etch behavior and geometry to provide in a virtual fabrication system a semi-physical approach to modeling multi-material etches based on a small set of input parameters that characterize the etch behavior.