Light-Emitting Device With Multi-Face Gates for Emission Control
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Solution Overview
Problem
Existing light-emitting devices, particularly those using organic light-emitting elements, suffer from incomplete control of light emission and non-light emission due to fluctuations in source-drain voltage or well voltage, leading to variations in light emission amount and deteriorated image quality.
Innovation Solution
A light-emitting device design where each pixel includes a light-emitting element, a driving transistor, and a switching transistor, with the gate electrode of the switching transistor being positioned on multiple faces surrounding the channel region to enhance control over light emission and non-light emission, using trench or fin gate structures to improve controllability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a conventional switching transistor with gate electrode on single face is used, then the device complexity is low, but the controllability of light emission and non-light emission deteriorates due to voltage fluctuations
Solution Approach 1:
The gate electrode structure transitions from a planar single-face configuration to a three-dimensional multi-face configuration (trench gate or fin gate), extending the gate control into the vertical dimension. This dimensional expansion allows the gate electrode to control the channel from multiple directions, significantly improving switching reliability and voltage control without adding complex external circuitry.
Solution Approach 2:
The gate electrode is segmented into multiple independent sections positioned on different faces surrounding the channel. Each gate electrode section can be independently controlled, allowing precise local control of the channel regions. This segmentation enables better management of voltage fluctuations and improves overall switching controllability.
2Reliability
If the gate electrode is positioned on multiple faces surrounding the channel, then the controllability improves, but the manufacturing precision requirements increase
Solution Approach 1:
The multi-face gate electrode structure is formed as an integrated unit during the transistor fabrication process, with gate electrodes positioned on different faces surrounding the channel. This preliminary structuring during manufacturing ensures consistent spatial relationships and reduces the need for high-precision post-fabrication alignment, making the design more manufacturable despite the complex three-dimensional geometry.
3Reliability
If conventional planar transistor structure is used, then the ease of manufacture is high, but the leakage current increases leading to light emission quality deterioration
Solution Approach 1:
The transistor structure transitions from a two-dimensional planar configuration to a three-dimensional structure where gate electrodes are positioned on multiple faces surrounding the channel. This vertical dimension addition creates better electrical isolation and reduces leakage currents by providing additional control paths, thereby improving light emission quality while using standard semiconductor fabrication techniques.
Data Source
AI summary
A light emitting device in which a plurality of pixels are arranged in a matrix in a semiconductor substrate. Each of the plurality of pixels includes a light-emitting element, a driving transistor configured to supply a current to the light-emitting element, and a switching transistor configured to control the light-emitting element. A gate electrode of the switching transistor is provided on at least two faces of four faces surrounding a cross section of a region to be a channel.