Multi-Fin Semiconductor Device With Independent Doping
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Solution Overview
Problem
Current semiconductor devices with 3D channels face challenges in achieving high breakdown voltage and low on-resistance, particularly due to the limitations of finFETs where the fin width is fixed, affecting characteristics such as breakdown voltage and on-resistance.
Innovation Solution
The semiconductor device incorporates a first fin and a second fin separated by an insulating layer, with a gate crossing both fins, where the first fin has a first doped area and the second fin has a second doped area, each with different voltages applied, and includes a well structure to enhance current flow and voltage handling capabilities.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a finFET structure is used with a fixed fin width, then the device achieves 3D channel control and improved short channel effects, but the breakdown voltage and on-resistance characteristics are limited and cannot be optimized
Solution Approach 1:
The device divides the channel into multiple independent fins (first fin, second fin, third fin) with different widths. Each fin can be independently doped and controlled, allowing the breakdown voltage and on-resistance to be optimized by adjusting the width and doping of specific fins rather than being constrained by a single fixed-width fin structure.
Solution Approach 2:
Different regions of the device (different fins) are given different properties through selective doping. The first fin has a first doping concentration, the second fin has a second doping concentration, and the third fin has a third doping concentration. This local differentiation allows each fin to contribute differently to the overall device characteristics, enabling simultaneous optimization of breakdown voltage and on-resistance.
2Productivity
If multiple fins with different doping concentrations are used, then the current flow and voltage handling are optimized, but the device structure and manufacturing process become more complex
Solution Approach 1:
The channel is segmented into multiple fins that can be independently doped. This segmentation allows selective doping of each fin region, enabling different doping concentrations in different fins while maintaining a unified gate structure that controls all fins, thus managing complexity through modular design.
Solution Approach 2:
The gate structure serves multiple functions by simultaneously controlling multiple fins with different doping concentrations. A single gate electrode controls the channel formation in all fins, providing universal control while allowing each fin to have specialized doping characteristics optimized for specific functions (current conduction, breakdown voltage, etc.).
Data Source
AI summary
According to example embodiments, a semiconductor device includes a first fin, a second fin that is separated from the first fin, and a gate on the first fin and the second fin. The gate crosses the first fin and the second fin. The first fin includes a first doped area at both sides of the gate. The first doped area is configured to have a first voltage applied thereto. The second fin includes a second doped area at both sides of the gate. The second doped area is configured to have a second voltage applied thereto. The second voltage is different than the first voltage.