Multi-Finger FET Gate Layout for Center Heat Suppression
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Solution Overview
Problem
In multi-finger type FETs, increasing the density of gate fingers to reduce chip area leads to increased temperature near the center of the gate fingers, causing characteristic deterioration.
Innovation Solution
A semiconductor device design where the gate fingers have varying distances from the channel layer, with a first gate finger having a greater distance than a second gate finger closer to the center, and an insulating film thickness that differs between these gate fingers to manage current density and heat dissipation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Area of stationary object
If the density of gate fingers is increased to reduce chip area, then the chip area is reduced, but the temperature near the center of the gate fingers increases causing characteristic deterioration
Solution Approach 1:
The patent applies local quality by making the insulating film thickness non-uniform across different regions. Specifically, the insulating film is made thicker in the center region where gate fingers are densely packed and temperature is higher, while maintaining thinner thickness in peripheral regions. This localized variation in insulating film thickness compensates for the temperature increase in the center region, thereby suppressing characteristic deterioration while maintaining high gate finger density and small chip area.
2Temperature
If the insulating film thickness is increased in the center region, then the temperature increase is suppressed, but the manufacturing complexity increases
Solution Approach 1:
The patent applies segmentation by dividing the insulating film into multiple regions with different thicknesses. The insulating film is segmented into a center region with greater thickness and peripheral regions with smaller thickness. This segmentation allows independent optimization of each region's thickness to address the temperature distribution pattern, while the overall structure remains manageable through defined regional variations rather than completely arbitrary complexity.
Data Source
AI summary
A semiconductor device includes a substrate, a channel layer provided on the substrate, a semiconductor layer provided on the channel layer, gate fingers and a gate connection wiring provided on the semiconductor layer, and an insulating film provided between the semiconductor layer and the gate fingers, wherein the gate fingers includes a first gate finger, and a second gate finger closer to the center of the gate fingers in an arrangement direction than the first gate finger, wherein a first distance between a lower surface of the first gate finger in contact with the insulating film and an upper surface of the channel layer in contact with the semiconductor layer is greater than a second distance between a lower surface of the second gate finger in contact with the insulating film and the upper surface of the channel layer in contact with the semiconductor layer.