Multi-Gate Semiconductor Structure with Source/Drain Leakage Isolation
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
The increased density of integrated circuit devices using multi-gate transistors leads to gate structure leakage paths, degrading semiconductor performance.
Innovation Solution
A semiconductor device design featuring first and second active patterns spaced apart from a substrate, with a gate structure crossing these patterns, and insulating structures between source/drain areas that are separated by the gate structure, preventing direct contact with the substrate, thereby enhancing performance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If multi-gate transistor density is increased, then integrated circuit device density is improved, but gate structure leakage paths are formed and semiconductor performance is degraded
Solution Approach 1:
The gate structure is segmented into multiple gates (first gate, second gate, third gate, fourth gate) arranged in a bridge configuration around the active patterns. This segmentation allows each gate to independently control its respective active pattern, preventing leakage paths while maintaining high device density. The segmented gate structure wraps around the active patterns from multiple directions, ensuring complete control without forming leakage paths between gates.
Solution Approach 2:
The gate structure transitions from a planar two-dimensional arrangement to a three-dimensional bridge configuration that wraps around the active patterns. The gates extend in both first and second directions, creating a multi-dimensional control structure that encompasses the active patterns from multiple spatial dimensions. This dimensional change enables complete gate control while preventing leakage paths that would occur in simpler planar configurations.
2Reliability
If insulating structures are added between source/drain areas and substrate, then leakage paths are prevented and performance is improved, but fabrication process complexity increases
Solution Approach 1:
The first insulating structure and second insulating structure are merged into a single continuous insulating layer that extends from the substrate through the gate structure. This merging approach prevents leakage paths between the substrate and source/drain areas while eliminating the need for separate insulating structure fabrication steps. The unified insulating structure simplifies the fabrication process by reducing the number of discrete steps required compared to forming separate insulating structures at different locations.
Solution Approach 2:
The insulating structure serves multiple functions simultaneously: it provides electrical isolation between the substrate and source/drain areas to prevent leakage paths, supports the gate structure during fabrication, and maintains structural integrity throughout the device. This multi-functionality reduces the need for additional specialized components or process steps, thereby simplifying the overall fabrication process while achieving reliable leakage prevention.
Data Source
AI summary
A semiconductor device includes: a first active pattern extending in a first direction; a second active pattern spaced apart extending in the first direction, the first active pattern being provided between the second active pattern and a substrate; a gate structure extending in a second direction, the first active pattern and the second active pattern passing through the gate structure, and the second direction crossing the first direction; a first source/drain area connected with the first active pattern and provided on a side of the gate structure; a second source/drain area connected with the second active pattern and provided on the first source/drain area; a first insulating structure provided between the substrate and the first source/drain area, the first insulating structure not being provided between the substrate and the gate structure; and a second insulating structure provided between the first source/drain area and the second source/drain area.