Multi-Ground Electrode Plasma Control for Thin Film Uniformity

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Solution Overview

Problem

As substrate sizes increase, localized variations in plasma density lead to non-uniform thin film properties and thickness uniformity issues at the center and edge portions, due to plasma density non-uniformity.

Innovation Solution

A substrate processing apparatus with a power supply unit, processing unit, and substrate support unit featuring multiple ground electrodes, including a disk-shaped and ring-shaped electrode configuration, connected to an L-C circuit for independent plasma intensity control, which adjusts plasma density and intensity through parameter control.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Area of stationary object

If substrate size is increased, then processing capacity is improved, but plasma density uniformity deteriorates

Engineering Contradiction:
Improvesubstrate sizeVSAvoidthin film thickness uniformity
Core Design Contradiction:
Area of stationary objectVSManufacturing precision

Solution Approach 1:

The substrate support unit is divided into multiple independent ground electrodes (first ground electrode and second ground electrode) that can be controlled separately. This segmentation allows independent plasma intensity control at different substrate regions (center and edge portions), enabling uniform thin film deposition across large substrates by compensating for localized plasma density variations.

Inventive Principle:
Principle #1Segmentation

2Device complexity

If single ground electrode configuration is used, then device complexity is reduced, but plasma intensity control precision deteriorates

Engineering Contradiction:
Improveelectrode configurationVSAvoidplasma density uniformity
Core Design Contradiction:
Device complexityVSManufacturing precision

Solution Approach 1:

The single ground electrode is segmented into multiple independent ground electrodes (first and second ground electrodes) positioned at different locations. Each electrode can be independently controlled through separate plasma intensity controllers, enabling precise local plasma density adjustment to achieve uniform plasma distribution across the substrate.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

Different regions of the substrate receive customized plasma intensity control through dedicated ground electrodes. The first ground electrode controls plasma at one region while the second ground electrode controls plasma at another region, allowing each area to have optimal plasma density for uniform thin film formation.

Inventive Principle:
Principle #3Local quality

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This configuration effectively reduces plasma non-uniformity, improving the uniformity of thin film properties and thickness across the substrate by allowing individual control of plasma at the center and edge regions.

Implementation Method 1

at least one of the first ground electrode and the second ground electrode is connected to an L-C circuit including an inductor, a capacitor, and a variable capacitor

Methodology Applied
Scientific EffectL-C circuit resonance: Resonance

Implementation Method 2

a processing unit, electrically connected to the power supply unit... configured to function as an electrode that supplies power to a reaction space

Methodology Applied
Scientific EffectPlasma: Plasma

Data Source

PatentUS11804364B2Substrate processing apparatus
Publication Date: 2023.10.31 ASM IP HLDG BV
  • US11804364B2 patent drawing
  • US11804364B2 patent drawing
  • US11804364B2 patent drawing

AI summary

A substrate processing apparatus capable of locally controlling a plasma intensity and improving thin film properties and thickness uniformity includes: a power supply unit, a processing unit electrically connected to the power supply unit, and a substrate support unit below the processing unit, wherein the substrate support unit includes a first ground electrode and a second ground electrode.