Multi-Head Die Bonding With Curved Contact to Prevent Voids
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Solution Overview
Problem
The challenge in semiconductor device manufacturing lies in achieving high-efficiency bonding between semiconductor dies and wafers with precise alignment and contact, as existing methods struggle to prevent voids and gaps at the bonding interface, leading to potential bonding failures.
Innovation Solution
A bonding tool with multiple bonding heads, each designed for different die sizes, uses suction and bending mechanisms to ensure precise contact and alignment, employing vacuum holes and bending members to adapt to varying die sizes and shapes, thereby minimizing gaps and enhancing bonding performance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional bonding methods are used, then bonding process is simple, but voids and gaps occur at the bonding interface leading to bonding failures
Solution Approach 1:
The bonding head incorporates a bending member that can dynamically adjust the curvature of the semiconductor die during the bonding process. This dynamic adjustment allows the die to maintain progressive contact with the substrate, preventing voids and gaps while adapting to different die sizes and shapes, thereby improving bonding reliability without requiring multiple fixed-configuration bonding heads
Solution Approach 2:
The system changes the curvature parameter of the semiconductor die by activating the bending member, which applies controlled stress to deform the die into a curved shape. This parameter change enables the die to conform to the substrate surface and maintain consistent contact pressure during bonding, eliminating voids and gaps while using a single versatile bonding head
2Adaptability or versatility
If multiple bonding heads are used for different die sizes, then adaptability to various die sizes and shapes is improved, but device complexity increases
Solution Approach 1:
The bonding head is designed with a universal bending member that can adapt to different die sizes and shapes through controlled deformation. Instead of requiring separate bonding heads for each die type, the single bonding head with the bending member can handle various die configurations by adjusting the curvature, thereby achieving multi-functionality and versatility while reducing the number of components needed
3Manufacturing precision
If uniform suction force is applied, then bonding process is simple, but gaps and voids form at the bonding interface
Solution Approach 1:
The bending member dynamically deforms the semiconductor die during the bonding process, creating a curved shape that ensures progressive contact from the center outward. This dynamic deformation, combined with suction force, maintains uniform contact pressure across the bonding interface, preventing gaps and voids while enabling precise bonding without complex multi-step procedures
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively reduces the likelihood of voids and gaps at the bonding interface, improving the efficiency and reliability of the bonding process by ensuring progressive and complete contact between semiconductor dies and wafers, thus enhancing the overall performance and reducing the risk of bonding failures.
Implementation Method 1
Each of the at least two bonding heads includes a plurality of vacuum holes configured to suck a semiconductor die
Data Source
AI summary
A method includes configuring a bonding tool based on a first semiconductor die and a second semiconductor die, wherein the bonding tool includes a platform and a first bonding head and a second bonding head connected to the platform; attaching the first semiconductor die to the first bonding head; moving the first semiconductor die toward a semiconductor wafer to bond the first semiconductor die to the semiconductor wafer; releasing the first semiconductor die from the first bonding head; configuring the platform to cause the second bonding head to move the second semiconductor die to the location over the semiconductor wafer while keeping the first bonding head on the platform; and moving the second semiconductor die by the second bonding head toward the semiconductor wafer to bond the second semiconductor die to the semiconductor wafer.