Multi-Height Gate Electrode Layout for Short-Resistant Contacts
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Solution Overview
Problem
Current semiconductor device fabrication methods face challenges in preventing short circuits between the gate electrode and source/drain region due to insufficient height differences in self-aligned contact processes, leading to reliability and integration issues.
Innovation Solution
The semiconductor device incorporates a gate electrode with distinct height portions, where the first portion has a lower top surface and the second portion has a higher top surface, allowing for a sufficient distance between contact plugs and the source/drain regions, preventing short circuits and enhancing product reliability and process margin.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If a self-aligned contact process is used to form contact plugs, then manufacturing precision is improved, but the height difference between the gate electrode and source/drain region is insufficient, causing short circuits
Solution Approach 1:
The gate electrode is divided into two portions with different heights: a first portion at a lower height and a second portion at a higher height. This segmentation allows the contact plug to be self-aligned to the higher second portion while maintaining sufficient vertical distance from the source/drain region, thus preventing short circuits while preserving self-alignment manufacturing precision.
Solution Approach 2:
The solution introduces a vertical height dimension differentiation within the gate electrode structure. By creating a multi-level gate electrode with distinct height portions, the invention resolves the conflict between horizontal self-alignment requirements and vertical spacing requirements, enabling both precise alignment and short circuit prevention.
2Device complexity
If the gate electrode is formed with a uniform height, then device complexity is reduced, but the distance between contact plugs and source/drain region is insufficient
Solution Approach 1:
The gate electrode is segmented into two height portions, where the higher second portion serves as the alignment reference for contact plug formation. This segmentation maintains relatively simple manufacturing processes while achieving precise contact plug positioning and adequate spacing from the source/drain region.
3Area of stationary object
If the contact plug is positioned closer to the source/drain region, then area is reduced, but short circuits occur due to insufficient height difference
Solution Approach 1:
The invention utilizes the vertical dimension by creating a higher second portion of the gate electrode. This allows the contact plug to be positioned closer to the source/drain region in the horizontal plane while maintaining sufficient vertical electrical isolation, thus reducing device area without compromising reliability.
Data Source
AI summary
A semiconductor device includes an active pattern on a substrate, the active pattern extending in a first direction, a gate electrode on the active pattern, the gate electrode extending in a second direction intersecting the first direction and including a first portion and a second portion arranged along the second direction, a first contact plug on the gate electrode, the first contact plug being connected to a top surface of the second portion of the gate electrode, a source/drain region in the active pattern on a sidewall of the gate electrode, and a source/drain contact on the source/drain region, a height of a top surface of the source/drain contact being higher than a top surface of the first portion of the gate electrode and lower than the top surface of the second portion of the gate electrode.