Multi-Height Imprint Template for Dual Damascene Pattern Control

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Solution Overview

Problem

The miniaturization of semiconductor devices requires more complex and precise formation of vias and upper layer interconnection lines, which existing dual damascene methods using the imprint technique struggle to achieve, particularly in forming interconnection lines with varying widths and thicknesses.

Innovation Solution

A template with a specific transferring pattern, including projecting and columnar portions, is used to form trenches and holes on a resist film, allowing for the creation of dual damascene patterns with interconnection lines of different widths and thicknesses, and vias with uniform bottom depth, enabling precise control over via and interconnection line sizes.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Manufacturing precision

If conventional imprint technique is used for dual damascene method, then manufacturing process is simple, but manufacturing precision of via size and interconnection line size deteriorates

Engineering Contradiction:

Improvevia size and interconnection line sizeVSAvoidtemplate structure

Core Design Contradiction:

Manufacturing precisionVSDevice complexity

Solution Approach 1:

The template pattern is segmented into multiple height levels (first height for interconnection lines, second height for vias). This segmentation allows different regions of the template to form different structures (trenches vs. holes) in a single imprint process, achieving precise control over via size and interconnection line size while maintaining process simplicity.

Inventive Principle:

Principle #1Segmentation

Solution Approach 2:

The invention adds the height dimension to the template pattern design. By creating patterns at different heights (first height and second height), the template can simultaneously define both interconnection line trenches and via holes with different dimensions, resolving the contradiction between manufacturing precision and device complexity.

Inventive Principle:

Principle #17Another dimension (Dimensionality change)

2Adaptability or versatility

If single height pattern is used in template, then template structure is simple, but adaptability to form interconnection lines with varying widths and thicknesses deteriorates

Engineering Contradiction:

Improveinterconnection line width and thickness variationVSAvoidtemplate pattern

Core Design Contradiction:

Adaptability or versatilityVSDevice complexity

Solution Approach 1:

Different regions of the template are given different local qualities in terms of pattern height. The first pattern regions have a first height suitable for interconnection lines, while the second pattern regions have a second height suitable for vias. This local differentiation enables the template to adapt to forming interconnection lines with varying widths and thicknesses, as well as via holes with different dimensions.

Inventive Principle:

Principle #3Local quality

Solution Approach 2:

The template pattern is designed with dynamic height variation to accommodate different structural requirements. By incorporating patterns at multiple heights, the template can dynamically adapt its profile during the imprint process to form both shallow trenches (for interconnection lines) and deep holes (for vias), achieving versatility without excessive complexity.

Inventive Principle:

Principle #15Dynamics

3Volume of moving object

If via size is reduced for miniaturization, then semiconductor device size is reduced, but manufacturing precision requirement increases

Engineering Contradiction:

Improvesemiconductor device sizeVSAvoidvia size control

Core Design Contradiction:

Volume of moving objectVSManufacturing precision

Solution Approach 1:

The invention replaces complex multi-step mechanical processing with a single imprinting action. By pre-forming the template with patterns at different heights, the via size control is achieved through the template's built-in geometry rather than through complex mechanical adjustment during manufacturing. This substitution maintains via size precision while enabling device miniaturization.

Inventive Principle:

Principle #28Mechanics substitution (Replace mechanical system)

Data Source

PatentUS11806901B2Template, template manufacturing method, and semiconductor device manufacturing method

Publication Date: 2023.11.07 KIOXIA CORP

AI summary

According to one embodiment, a template is provided with a transferring pattern on a first surface of a substrate. The transferring pattern includes a first projecting portion that projects from the first surface with a first height and extends in a first direction along the first surface, a second projecting portion that projects from the first surface with a second height higher than the first height and extends in a second direction along the first surface, a first columnar portion that is arranged at a position overlapping with the first projecting portion and has a top surface with a third height higher than the second height as a height from the first surface, and a second columnar portion that is arranged at a position overlapping with the second projecting portion and has a top surface with the third height as a height from the first surface.