Multi-Junction SPAD Pixel Bias Control for PDE Modulation
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Solution Overview
Problem
Existing SPAD pixel arrays face challenges in achieving high sensitivity while avoiding pixel saturation and maintaining timing performance under varying illumination conditions, particularly in high-ambient light scenes.
Innovation Solution
The implementation of a bias control circuit that adjusts the reverse-bias voltage levels of multiple avalanche diodes within each sensing element, allowing for dynamic modulation of pixel sensitivity by enabling or disabling diodes, thereby controlling the effective active area and probability of avalanche pulses.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If a single avalanche diode is used in each SPAD pixel, then the device complexity is low, but the photon detection efficiency cannot be modulated and the pixel saturates easily in high-ambient light scenes
Solution Approach 1:
Each SPAD pixel is divided into multiple avalanche diodes (e.g., four diodes arranged in a 2x2 grid), allowing independent control of each diode's bias voltage. This segmentation enables the pixel to operate in different sensitivity modes by activating one, two, three, or all four diodes, thereby modulating the effective active area and preventing saturation in high-ambient light conditions while maintaining the ability to detect single photons.
2Reliability
If the reverse-bias voltage is increased to improve photon detection efficiency, then the sensitivity increases, but the pixel saturates more easily in high-ambient light scenes
Solution Approach 1:
The bias control circuit dynamically adjusts the reverse-bias voltage of individual avalanche diodes based on illumination conditions. In low-light conditions, higher bias voltages are applied to maximize photon detection efficiency. In high-ambient light conditions, the bias voltage is reduced or individual diodes are deactivated to prevent saturation, allowing the system to adapt to varying lighting environments without sacrificing detection performance.
3Area of stationary object
If multiple avalanche diodes are used in each sensing element, then the effective active area increases, but the timing performance may deteriorate due to increased complexity of avalanche current pulse detection
Solution Approach 1:
Multiple avalanche diodes within a single SPAD pixel are electrically and functionally merged through shared readout circuitry and common timing detection mechanisms. The output signals from individual diodes are combined and processed by a unified timing circuit that maintains consistent time-of-arrival resolution across all diodes. This merging approach allows the system to utilize the increased effective active area provided by multiple diodes while preserving precise timing performance through a coordinated detection and processing architecture.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enables real-time adjustment of pixel sensitivity to optimize detection capabilities, reducing pixel saturation and improving dynamic range and timing performance across different lighting conditions.
Implementation Method 1
a photosensitive material, which is configured to generate photoelectrons in response to incident optical radiation
Implementation Method 2
a plurality of avalanche diodes, which are disposed at different, respective locations within the sensing element in electrical communication with the photosensitive material and are configured, when reverse-biased, to generate electrical avalanches in response to the generated photoelectrons
Data Source
AI summary
A sensing device includes an array of sensing elements and a bias control circuit. Each sensing element of the array of sensing elements includes (i) a photosensitive material, which is configured to generate photoelectrons in response to incident optical radiation, and (ii) a plurality of avalanche diodes, which are disposed at different, respective locations within the sensing element in electrical communication with the photosensitive material and are configured, when reverse-biased, to generate electrical avalanches in response to the generated photoelectrons. The bias control circuit is configured to selectively set respective reverse-bias voltage levels of the avalanche diodes within each sensing element to different, respective values.


