Multi-Layer Barrier Structure for Semiconductor Device On-Resistance
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Solution Overview
Problem
High electron mobility transistors face challenges with high on-resistance due to thin barrier layers, which can lead to difficulty in turning off the transistor and increased power consumption when barrier layers are thickened.
Innovation Solution
A semiconductor device with a structure comprising multiple barrier layers, where the barrier layers have different band gaps and aluminum contents, with the layer farther from the channel layer acting as an etching sacrificial layer to protect the closer layer and maintain appropriate two-dimensional electron gas concentration, reducing on-resistance and enhancing control.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If the barrier layer thickness is increased to reduce on-resistance, then the on-resistance decreases, but the transistor becomes difficult to turn off and power consumption increases
Solution Approach 1:
The barrier layer is divided into multiple sub-layers with different materials and band gaps. The first barrier layer (closer to channel) has higher band gap material to maintain low on-resistance, while the second barrier layer (farther from channel) has lower band gap material to facilitate effective turn-off and reduce power consumption. This segmentation allows each layer to optimize for its specific function.
Solution Approach 2:
Different regions of the barrier structure are assigned different material compositions and band gap properties. The region closer to the channel interface uses high band gap material for low resistance, while the region farther away uses lower band gap material for better controllability and lower power consumption, creating local optimization throughout the structure.
2Ease of operation
If the barrier layer thickness is decreased to improve transistor switching capability, then the transistor can be turned off more easily, but the on-resistance increases
Solution Approach 1:
The barrier structure is segmented into multiple layers where the first layer (closer to channel) maintains sufficient thickness with high band gap material to ensure low on-resistance, while the overall structure allows effective switching through the combined effect of multiple layers with appropriate band gap gradients.
Solution Approach 2:
The barrier structure uses composite materials with different band gap properties arranged in specific configurations. This composite approach allows the structure to simultaneously achieve low on-resistance through the high band gap layer near the channel and good switching capability through the overall multi-layer configuration.
3Ease of manufacture
If a single barrier layer with uniform thickness is used, then the manufacturing process is simple, but it is difficult to simultaneously achieve low on-resistance and good switching control
Solution Approach 1:
The barrier layer is segmented into multiple sub-layers with different materials and thicknesses, allowing each layer to be optimized for specific electrical performance requirements while maintaining a systematic manufacturing approach that can be implemented using standard semiconductor fabrication processes.
Solution Approach 2:
The manufacturing process incorporates controlled variations in material composition and layer thickness parameters to achieve the desired electrical performance. By systematically adjusting these parameters across different layers, the device achieves optimal balance between low on-resistance and good switching control.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The multi-layer barrier structure effectively reduces on-resistance and increases threshold voltage, making the semiconductor device easier to control and reducing power consumption while maintaining appropriate two-dimensional electron gas concentration.
Implementation Method 1
The first barrier layer includes a first material with a first band gap, the second barrier layer includes a second material with a second band gap, and the first band gap is greater than the second band gap
Data Source
AI summary
A semiconductor device and a method for manufacturing the same are provided. The semiconductor device includes a substrate, a channel layer on the substrate, a first barrier layer on the channel layer, a second barrier layer on the first barrier layer, and a gate element on the second barrier layer. The first barrier layer includes a first material with a first band gap, the second barrier layer includes a second material with a second band gap, and the first band gap is greater than the second band gap.