Multi-Layer Etching Barrier for Microfluidic Recessed Structures
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Solution Overview
Problem
Current etching methods for film patterning, such as dry and wet etching, face challenges in achieving high precision and complex structures for microfluidic devices, with low production efficiency and high costs, especially for materials like glass, where traditional methods fail to meet accuracy and productivity requirements.
Innovation Solution
A patterning method involving the formation of multiple etching barrier layers on a film surface, where each layer serves as a mask for subsequent etching processes, allowing for the creation of recessed structures with varying depths through a series of etching steps, utilizing wet etching techniques to selectively remove layers and control depth, ensuring high precision and efficiency.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If dry etching method is used, then etching precision is improved, but etching rate becomes extremely slow and production efficiency is low
Solution Approach 1:
The patent divides the etching process into multiple stages by using multiple etching barrier layers with different materials. Each layer is selectively removed to create recessed structures at different depths, allowing precise control of etching depth and shape while maintaining high etching rates through wet etching methods.
Solution Approach 2:
The patent changes the material parameters of etching barrier layers to achieve selective etching. By using materials with different etching rates and selective ratios (such as silicon oxide, silicon nitride, silicon oxynitride), the process achieves high precision without sacrificing productivity, as each material can be etched at optimized rates.
2Productivity
If wet etching method is used, then etching rate is significantly improved, but manufacturing precision for complex structures becomes insufficient
Solution Approach 1:
The patent segments the etching process into multiple selective etching steps, each targeting a specific depth range. By using different etching barrier layer materials with distinct selective ratios, the process achieves both high etching rates and precise depth control for complex multi-level recessed structures.
Solution Approach 2:
The patent employs composite material structures with multiple etching barrier layers of different materials (silicon oxide, silicon nitride, silicon oxynitride). This composite approach enables selective etching at different rates, allowing wet etching to achieve both high productivity and high precision for complex microfluidic device structures.
3Manufacturing precision
If injection molding process is used for polymer materials, then complex structures can be formed, but productivity for mass production is low and mold cost is high
Solution Approach 1:
The patent replaces the mechanical injection molding process with a chemical etching process using multiple etching barrier layers. This substitution eliminates the need for expensive molds and enables direct fabrication of complex microfluidic device structures on glass and other substrates, significantly improving mass production productivity while maintaining high structural precision.
4Ease of manufacture
If usual manufacturing method is used for specific materials, then simple structures can be formed, but complex high-precision structures cannot be manufactured with sufficient accuracy
Solution Approach 1:
The patent introduces multiple etching barrier layers with different materials to segment the etching process into controlled stages. This allows simple deposition processes to be combined with selective etching, achieving both manufacturing ease and high precision for complex microfluidic device structures that cannot be obtained with single-step methods.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method enhances production efficiency and accuracy in creating complex structures, allowing for high-precision microfluidic devices with simplified manufacturing processes and wide applicability across various materials, while maintaining high dimensional accuracy and reducing material costs.
Implementation Method 1
performing n etching processes on the film to form a recessed structure on the first surface using the n etching barrier layers as masks
Data Source
AI summary
A patterning method of a film is disclosed. The method including: providing a film including a first surface; forming n etching barrier layers on the first surface of the film, and n is an integer larger than or equal to 2; and performing n etching processes on the film to form a recessed structure on the first surface using the n etching barrier layers as masks, the recessed structure includes n bottom surfaces respectively having different depths. Two adjacent etching processes of the n etching processes include a previous etching process and a subsequent etching process, and after the previous etching process is completed, a part of the n etching barrier layers is removed to form a mask for the subsequent etching process; a material of the part of the n etching barrier layers which is removed is different from a material of the mask of the subsequent etching process.