Multi-Layer Insulation for Ultra-Large IC Yield

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Solution Overview

Problem

The manufacturing of ultra-large integrated circuits is hindered by high defect rates in insulation layers, leading to low yields due to the likelihood of short-circuits between conductive layers, as existing methods fail to effectively address defects between layers.

Innovation Solution

Implementing multiple insulation layers between adjacent conductive layers, where defects are randomly formed, significantly reduces the probability of overlapping defects that could cause short-circuits, thereby improving the yield of larger integrated circuits.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If multiple insulation layers are used between conductive layers, then the reliability of ultra-large integrated circuits is improved by reducing short-circuit probability, but the device complexity and manufacturing process complexity increase

Engineering Contradiction:
ImproveyieldVSAvoidnumber of insulation layers
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The patent applies segmentation by dividing the insulation structure into multiple separate insulation layers (first insulation layer and second insulation layer) between adjacent conductive layers. Each insulation layer is formed independently, and defects in one layer are statistically unlikely to align with defects in another layer, thereby segmenting the failure modes and reducing overall short-circuit probability while maintaining manufacturability through separate formation processes.

Inventive Principle:
Principle #1Segmentation

2Productivity

If the area of conductive layers is increased to sixty four square centimeters or more, then the productivity and functionality of integrated circuits are improved, but the likelihood of defects causing short-circuits increases

Engineering Contradiction:
Improvearea of conductive layerVSAvoiddefect rate
Core Design Contradiction:
ProductivityVSReliability

Solution Approach 1:

The patent addresses the defect issue in large-area conductive layers by transitioning to a multi-layer insulation structure. Instead of relying on a single thick insulation layer, the solution adds a vertical dimension with multiple thinner insulation layers, where defect alignment probability decreases exponentially with each additional layer, thereby enabling large 64 cm² circuits to achieve high yield.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

3Ease of manufacture

If defects are present in insulation layers, then the manufacturing process remains practical and cost-effective, but short-circuits between conductive layers occur

Engineering Contradiction:
Improvedefect toleranceVSAvoidshort-circuit prevention
Core Design Contradiction:
Ease of manufactureVSReliability

Solution Approach 1:

The patent converts the harmful effect of defects into a beneficial statistical phenomenon. By using multiple insulation layers, the random distribution of defects means that while each layer may contain defects, the probability of defects aligning across layers to cause short-circuits becomes extremely low. This transforms the presence of defects from a guaranteed failure mode into a manageable statistical variation that maintains high yield.

Inventive Principle:
Principle #22Blessing in disguise (Convert harm into benefit)

Data Source

PatentUS11189558B2Process to yield ultra-large integrated circuits and associated integrated circuits
Publication Date: 2021.11.30 RAYTHEON CO
  • US11189558B2 patent drawing
  • US11189558B2 patent drawing
  • US11189558B2 patent drawing

AI summary

An integrated circuit includes a first conductive layer and a first insulation layer formed on the first conductive layer. The integrated circuit also includes a second insulation layer formed on the first insulation layer and a second conductive layer formed on the second insulation layer. The first insulation layer may include a first defect, and the second insulation layer may include a second defect. The integrated circuit may also include a third insulation layer formed on the second conductive layer, a fourth insulation layer formed on the third insulation layer, and a third conductive layer formed on the fourth insulation layer. The third insulation layer may include a third defect, and the fourth insulation layer may include a fourth defect.