Multi-Layer Semiconductor Device 3D Integration Height Reduction
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Solution Overview
Problem
The trend towards miniaturization of electronic products has led to a demand for smaller, more densely packed semiconductor structures that require low-loss, lightweight multi-layer semiconductor devices with increased electronic capabilities, which conventional technologies struggle to meet in terms of power, performance, and computational efficiency.
Innovation Solution
The development of multi-layer semiconductor devices with 3D integrated circuit structures using fully depleted SOI circuit fabrication, precision wafer-wafer alignment, low-temperature wafer-wafer oxide bonding, and dense vertical interconnections, allowing for higher density and reduced system power consumption.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Length of moving object
If conventional planar circuit topologies are used, then manufacturing is simpler, but device height is larger and power efficiency is lower
Solution Approach 1:
The patent transitions from conventional planar (2D) circuit topologies to three-dimensional (3D) integrated circuit structures with multiple stacked layers. This dimensional change enables vertical interconnections through conductive vias, allowing electrical signals to travel between layers and achieving higher integration density while reducing the horizontal footprint and overall device height compared to planar designs.
Solution Approach 2:
The patent implements a multi-layer stacked architecture where multiple semiconductor layers are vertically nested and interconnected. Each layer contains circuit elements and conductive vias that connect to corresponding elements in adjacent layers, creating a nested structure similar to dolls within dolls. This nesting approach maximizes the use of vertical space and achieves high integration density.
2Quantity of substance
If multi-layer 3D integrated circuit structures are implemented, then integration density and power efficiency improve, but manufacturing precision requirements increase
Solution Approach 1:
The patent employs precision wafer alignment techniques performed before the bonding process to ensure accurate registration of circuit elements across multiple layers. Alignment marks and reference features are used to pre-position wafers with sub-micron accuracy, preventing misalignment issues that would compromise the functionality of vertical interconnections and reducing the need for post-assembly corrections.
Solution Approach 2:
The patent uses bonding interfaces and interconnect structures as intermediary elements that facilitate precise alignment and reliable electrical connections between stacked layers. These intermediaries include alignment marks, bonding pads, and conductive vias that serve as reference points and connection media, enabling accurate registration and functional integration across multiple layers while managing the complexity of multi-layer assembly.
3Use of energy by moving object
If wafer-scale 3D integration is used, then vertical interconnection density increases and system power reduces, but fabrication process complexity increases
Solution Approach 1:
The patent divides the 3D integrated circuit fabrication process into discrete, manageable stages including separate steps for forming conductive vias, depositing interlayer dielectric materials, creating bonding interfaces, and performing alignment and bonding operations. This segmentation of the fabrication process allows each step to be optimized independently and facilitates modular manufacturing, reducing overall process complexity while enabling wafer-scale 3D integration and the associated power efficiency benefits.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables the creation of compact multi-layer semiconductor devices with reduced height, improved power efficiency, and enhanced computational capabilities compared to conventional planar circuit topologies, addressing the challenges of miniaturization and increased density.
Implementation Method 1
The second section also includes an insulating layer having first and second opposing surfaces
Implementation Method 2
precision wafer-wafer alignment, low-temperature wafer-wafer oxide bonding
Data Source
AI summary
A multi-layer semiconductor device includes at least a first semiconductor structure and a second semiconductor structure, each having first and second opposing surfaces. The second semiconductor structure includes a first section and a second section, the second section including a device layer and an insulating layer. The second semiconductor structure also includes one or more conductive structures and one or more interconnect pads. Select ones of the interconnect pads are electrically coupled to select ones of the conductive structures. The multi-layer semiconductor device additionally includes one or more interconnect structures disposed between and coupled to select portions of second surfaces of each of the first and second semiconductor structures. A corresponding method for fabricating a multi-layer semiconductor device is also provided.