Multi-Layer Wire Interconnect Structure for IC Signal Speed
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Solution Overview
Problem
The challenge is to increase signal transmission speed in high-speed interfaces while minimizing coupling interference and maintaining a compact layout area, as wider wires exacerbate coupling issues and increase layout costs.
Innovation Solution
A wire interconnect structure for integrated circuits that reduces wire width by dispersing electrical current paths through a multi-layer wiring design with conductive via structures, allowing each wire to carry less current and minimizing differential path coupling, thereby reducing layout area and enhancing bandwidth.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If the wire width is broadened to carry large electrical current, then the wire can transmit sufficient current without burning out, but the coupling interference between wires increases and signal transmission speed decreases
Solution Approach 1:
The patent transitions from a single-layer wire layout to a multi-layer wiring structure (first, second, and third wiring layers stacked vertically). This dimensional change allows current paths to be distributed across multiple layers, reducing the current burden on each individual wire while maintaining adequate current carrying capacity. The vertical stacking enables wires to be closer together without increasing lateral coupling interference, thus preserving signal transmission speed.
Solution Approach 2:
The patent segments the current path by introducing multiple wiring layers and conductive via structures. Instead of using a single wide wire to carry all current from multiple transistors, the current is divided and routed through separate wires in different layers. This segmentation allows each wire to carry less current, reducing the need for wide wires and thereby reducing coupling interference between adjacent wires.
2Reliability
If the wire width is broadened to carry large electrical current, then the wire can transmit sufficient current, but the layout area increases and layout cost increases
Solution Approach 1:
The patent utilizes the vertical dimension by stacking multiple wiring layers (first, second, and third wiring layers) above the transistor array. This allows the current carrying function to be distributed across layers rather than requiring increased lateral wire width. Consequently, the layout area remains compact while still accommodating the necessary current carrying capacity through the multi-layer structure.
3Speed
If more transistors are disposed to provide larger electrical current, then the signal transmission speed increases, but the wire width must be broadened to carry the current, which increases coupling interference
Solution Approach 1:
The patent segments the current collection function by providing separate wiring paths for different transistor groups. The first wiring layer collects current from first transistors, the second wiring layer collects current from second transistors, and these are connected to different contact pads through distinct via structures. This segmentation prevents current from multiple transistors from converging into a single wide wire, thereby reducing coupling interference while maintaining the ability to transmit high-speed signals.
Solution Approach 2:
The patent uses vertical layering to separate current paths from different transistor groups. By distributing transistors and their associated wiring across multiple layers, the design allows more transistors to be connected without requiring proportionally wider wires at any single location. This reduces coupling interference while preserving the current capacity needed for high-speed transmission.
Data Source
AI summary
A wire interconnect structure of an integrated circuit includes a first wiring layer, a second wiring layer, a third wiring layer, first conductive via structures, second conductive via structures, and third conductive via structures. The first wiring layer includes a first wire connected to first transistors and a second wire connected to second transistors. The second wiring layer includes third wires and fourth wires that are perpendicular to the first wire and the second wire. The third wiring layer includes a fifth wire and a sixth wire that are parallel to the first wire and the second wire and respectively connected to a first contact pad and a second contact pad above. The first transistors are electrically connected to the first contact pad through the first wire, and the second transistors are electrically connected to the second contact pad through the second wire.