Multi-Level Plasma Source Layout for Uniform Large-Substrate Processing
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Solution Overview
Problem
Large substrates pose challenges in achieving uniform substrate processing due to difficulties in uniformly supplying dissociated process gas, leading to deteriorating processing uniformity and maintenance issues with existing substrate processing apparatuses.
Innovation Solution
A substrate processing apparatus with multiple plasma generation parts disposed at different heights above a gas injection part, supported by a structure that includes an insulating plate and a cooling plate, to ensure uniform plasma distribution and improved accessibility for maintenance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If a single plasma generation part is used, then the device complexity is low, but the substrate processing uniformity deteriorates due to inability to uniformly supply dissociated process gas to large substrates
Solution Approach 1:
The plasma generation part is divided into multiple independent plasma generation units (first plasma generation part and second plasma generation part) positioned at different heights. Each unit independently generates plasma and supplies dissociated process gas to different regions of the substrate, enabling uniform processing across large substrate areas while maintaining manageable device complexity through modular design
Solution Approach 2:
Plasma generation parts are arranged in the vertical dimension at different heights above the substrate. This vertical arrangement allows multiple plasma sources to simultaneously treat different radial regions of the substrate, transforming a single-plane plasma generation system into a multi-level system that achieves better gas distribution uniformity
2Manufacturing precision
If multiple plasma generation parts are disposed at different heights, then the substrate processing uniformity is improved, but the device complexity increases
Solution Approach 1:
Multiple plasma generation parts perform the same plasma generation function but are positioned at different heights to serve different substrate regions. This multi-functional arrangement allows each plasma generation unit to independently contribute to overall substrate processing uniformity, achieving enhanced performance while maintaining functional consistency across components
Solution Approach 2:
Different plasma generation parts are positioned at specific heights to target specific regions of the substrate. The first plasma generation part supplies plasma to one region while the second plasma generation part supplies plasma to another region, creating locally optimized processing conditions that collectively achieve uniform substrate processing
3Area of stationary object
If plasma generation parts are closely arranged, then the device size is reduced, but the ease of operation deteriorates due to maintenance difficulties
Solution Approach 1:
The plasma generation system is segmented into multiple independent units positioned at different vertical levels. This segmentation creates physical separation between plasma generation parts, providing adequate space for maintenance personnel to access and service each unit individually while maintaining a compact overall device footprint through vertical stacking
4Productivity
If a single plasma generation part is used, then the device complexity is low, but the productivity decreases due to limited processing area coverage
Solution Approach 1:
The system transitions from a single-plane plasma generation approach to a multi-level vertical arrangement. By positioning plasma generation parts at different heights, the system expands its effective processing coverage area without requiring a proportional increase in device footprint, thereby improving productivity while controlling device complexity
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The apparatus achieves improved substrate processing uniformity and efficiency by controlling the dissociation of process gas and maintaining high process efficiency, while facilitating easier maintenance by allowing for independent RF power application and varying installation heights of plasma generation parts.
Implementation Method 1
a plurality of plasma generation parts (300) disposed above the gas injection part (200) to generate plasma and configured to radicalize the process gas
Data Source
AI summary
The present invention disclosed herein relates to a substrate processing apparatus, and more particularly, to a substrate processing apparatus capable of processing a substrate using plasma. A substrate processing apparatus includes: a process chamber having an opening in an upper portion thereof; a gas injection part coupled to the opening to define a processing space for substrate processing together with the process chamber and inject a process gas into the processing space; and a plurality of plasma generation parts disposed above the gas injection part to generate plasma and configured to radicalize the process gas so as to supply the radicalized process gas into the gas injection part, wherein one and the other of the plurality of plasma generation parts are disposed at heights different from each other from a bottom surface of the gas injection part.