Substrate Film Deposition with Multi-Nozzle Thickness Distribution Control
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Solution Overview
Problem
Existing methods struggle to effectively control the in-pane film thickness distribution of films formed on substrates during semiconductor device manufacturing, particularly in achieving uniformity across the substrate surface.
Innovation Solution
A method involving alternating gas flow rates and supply strategies using multiple nozzles to form a film on a substrate, including supplying a precursor and a reactant while adjusting inert gas flow rates to control the film thickness distribution, such as using a first supply part with a first flow rate and adjacent second supply parts with varying flow rates to achieve a center convex distribution.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If a single gas supply method is used to form a film on a substrate, then the film formation process is simple, but the in-plane film thickness distribution cannot be effectively controlled
Solution Approach 1:
The gas supply system is divided into multiple independent nozzles (first nozzle and second nozzle) positioned at different locations. Each nozzle can supply gas independently with controllable flow rates, enabling spatially differentiated gas distribution across the substrate surface to achieve uniform or center-convex film thickness distribution
Solution Approach 2:
Different regions of the substrate receive different gas flow rates through the multi-nozzle system. The first nozzle supplies gas to a first region while the second nozzle supplies gas to a second region, creating local variations in gas concentration that result in controlled film thickness distribution patterns across different areas of the substrate
2Manufacturing precision
If alternating gas flow rates are used to control film thickness distribution, then film uniformity is improved, but the process time increases
Solution Approach 1:
The gas supply process alternates between different flow rate patterns in a periodic manner. During film formation, the system switches between supplying higher flow rates to certain nozzles and then to others, creating a periodic gas distribution pattern that achieves uniform film thickness while maintaining reasonable process throughput
Solution Approach 2:
The gas flow rates are dynamically adjusted during the film formation process rather than remaining static. The system transitions between different gas supply states (first flow rate pattern, second flow rate pattern) to optimize film thickness distribution, allowing the process to adapt to the evolving film formation conditions
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enhances the controllability of the in-plane film thickness distribution, allowing for both uniform and center convex distributions as needed, improving the manufacturing process efficiency and productivity.
Implementation Method 1
forming a film on a substrate by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing: forming a first layer by supplying a precursor to the substrate; and forming a second layer by supplying a reactant to the substrate and modifying the first layer
Implementation Method 2
supplying the precursor to the substrate from a first supply part while supplying an inert gas to the substrate at a first flow rate from the first supply part, and supplying an inert gas to the substrate at a second flow rate from a second supply part installed adjacent to the first supply part
Data Source
AI summary
A method includes forming a film on a substrate by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing: (a) forming a first layer by supplying a precursor to the substrate; and (b) forming a second layer by supplying a reactant to the substrate and modifying the first layer. The (a) includes: (a-1) supplying the precursor to the substrate from a first supply part while supplying an inert gas at a first flow rate, and supplying an inert gas at a second flow rate from a second supply part; and (a-2) supplying the precursor to the substrate while supplying the inert gas at a third flow rate from the first supply part, or supplying the precursor from the first supply part while stopping the supply of the inert gas, and supplying the inert gas at a fourth flow rate from the second supply part.