Multi-nozzle Gas Flow Control for Semiconductor Film Uniformity
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Solution Overview
Problem
Existing semiconductor manufacturing processes face challenges in controlling the in-plane film thickness distribution of films formed on substrates, particularly on pattern wafers with large surface areas, leading to uneven film thickness and reduced uniformity.
Innovation Solution
A substrate processing apparatus is used to form films by controlling the flow rates of inert gases from multiple nozzles, balancing the flow rates of gases supplied from different nozzles to achieve a centrally convex or flat film thickness distribution, utilizing a sequence of supplying precursor, reactant, and oxidant gases in cycles to control the film formation process.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional film formation processes are used on pattern wafers with large surface areas, then film formation can be achieved, but the in-plane film thickness distribution becomes uneven and uniformity is reduced
Solution Approach 1:
The gas supply system is segmented into multiple nozzles (first nozzle, second nozzle, third nozzle) positioned at different locations relative to the exhaust port. Each nozzle supplies inert gas to different regions of the substrate, allowing independent control of gas flow distribution to achieve uniform film thickness across the substrate surface.
Solution Approach 2:
Different flow rates of inert gas are supplied from different nozzles based on their positions. The second nozzle (farther from exhaust port) and third nozzle (closer to exhaust port) supply different amounts of inert gas to compensate for the non-uniform gas distribution, creating locally optimized conditions for uniform film formation across the entire substrate.
2Manufacturing precision
If multiple nozzles with different flow rates are used to control film thickness distribution, then uniformity is improved, but device complexity increases
Solution Approach 1:
The inert gas supplied from multiple nozzles serves multiple functions: it acts as a carrier gas for delivering precursor and reactant gases to the substrate, and simultaneously functions to control the in-plane film thickness distribution by adjusting flow rates from different nozzles. This multi-functionality reduces the need for additional dedicated control mechanisms.
Solution Approach 2:
The system controls film thickness distribution by changing the flow rate parameters of inert gas from different nozzles. By adjusting these flow rate parameters, the gas distribution across the substrate is optimized to achieve uniform film formation without requiring complex mechanical or structural modifications to the apparatus.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach allows for precise control of in-plane film thickness distribution, enabling the formation of films with uniform thickness even on pattern wafers, reducing the need for additional equipment and maintaining low manufacturing costs.
Implementation Method 1
supplying a precursor from a first nozzle to a substrate and exhausting the precursor from an exhaust port
Implementation Method 2
supplying a first reactant from a second nozzle disposed at a position farther from the exhaust port than the first nozzle to the substrate and exhausting the first reactant from the exhaust port
Implementation Method 3
supplying a second reactant from a third nozzle disposed at a position closer to the exhaust port than the second nozzle to the substrate and exhausting the second reactant from the exhaust port
Implementation Method 4
forming a film on a substrate by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing: supplying a precursor from a first nozzle to a substrate
Data Source
AI summary
A method of manufacturing a semiconductor device includes: forming a film on a substrate by performing a cycle a predetermined number of times. The cycle includes non-simultaneously performing: supplying a precursor from a first nozzle to a substrate and exhausting the precursor from an exhaust port; supplying a first reactant from a second nozzle to the substrate and exhausting the first reactant from the exhaust port; and supplying a second reactant from a third nozzle to the substrate and exhausting the second reactant from the exhaust port. A substrate in-plane film thickness distribution of the film formed on the substrate is controlled by controlling a balance between a flow rate of an inert gas supplied from the second nozzle, a flow rate of an inert gas supplied from the third nozzle, and a flow rate of an inert gas supplied from the first nozzle in supplying the precursor.