Multi-Plane Memory Programming With Defective-Plane Disablement

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Solution Overview

Problem

Multi-plane memory devices experience decreased programming efficiency and increased program disturbance when defective memory planes are repeatedly programmed, affecting normal memory planes.

Innovation Solution

A method for programming multi-plane memory devices that involves applying a program pulse to memory cells, verifying their state, and disabling a plane if a preset number of cells fail to reach a predetermined state after multiple attempts, thereby reducing program disturbance and accelerating data programming.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Productivity

If multi-plane memory device programs two or more memory planes simultaneously, then programming efficiency is enhanced, but when defective memory planes are present, programming speed decreases and program disturbance increases in normal memory planes

Engineering Contradiction:
Improveprogramming efficiencyVSAvoidprogramming speed
Core Design Contradiction:
ProductivityVSReliability

Solution Approach 1:

The patent applies preliminary verification action by verifying the program state of memory cells after each programming attempt before proceeding to the next plane. This preliminary check identifies defective planes early, preventing wasted programming cycles on planes that cannot be successfully programmed, thus maintaining high programming efficiency while avoiding the slowdown caused by repeatedly attempting to program defective planes.

Inventive Principle:
Principle #10Preliminary action

2Reliability

If defective memory planes are repeatedly programmed, then attempt is made to program data into defective planes, but programming speed decreases and program disturbance increases in normal memory plane

Engineering Contradiction:
Improvedata programming attemptVSAvoidprogramming speed
Core Design Contradiction:
ReliabilityVSProductivity

Solution Approach 1:

The patent extracts and isolates defective memory planes from the simultaneous programming process. By verifying the program state of each plane and identifying those that fail to reach the predetermined state, the system separates defective planes from the normal programming workflow. This extraction prevents defective planes from causing program disturbance to normal planes and eliminates wasted programming cycles, thereby maintaining high programming speed.

Inventive Principle:
Principle #2Taking out (Extraction)

3Productivity

If multiple memory planes are programmed simultaneously, then programming efficiency is enhanced, but program disturbance increases in normal memory plane when defective planes are present

Engineering Contradiction:
Improveprogramming efficiencyVSAvoidprogram disturbance
Core Design Contradiction:
ProductivityVSObject-affected harmful factors

Solution Approach 1:

The patent implements feedback control by continuously monitoring the program state of memory cells in each plane after programming attempts. The verification step provides feedback on whether each plane has been successfully programmed or is defective. Based on this feedback, the system adjusts the programming process by disabling defective planes and continuing with only functional planes, thereby preventing program disturbance to normal planes while maintaining high programming efficiency through selective simultaneous programming.

Inventive Principle:
Principle #23Feedback

Data Source

PatentUS20250292846A1Method of programming multi-plane memory device
Publication Date: 2025.09.18 YANGTZE MEMORY TECH CO LTD
  • US20250292846A1 patent drawing
  • US20250292846A1 patent drawing
  • US20250292846A1 patent drawing

AI summary

A memory device includes a plurality of planes. A method of programming the memory device includes applying a first program pulse to one or more memory cells of a first plane of the plurality of planes, verifying whether each one of the memory cells reaches a predetermined program state, and in response to a preset number of the memory cells in the first plane failing to reach the predetermined program state after the memory cells being verified for a predetermined number of times, disabling the first plane when applying a second program pulse after the first program pulse.