Concurrent Multi-Plane Memory Block Erase for Higher Throughput

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Solution Overview

Problem

Existing memory devices face significant throughput impacts due to the time-consuming nature of single-block erase operations, particularly in low density universal flash storage devices, where erasing a single memory block contributes a substantial portion of the overall operating time.

Innovation Solution

A multi-block erase operation is executed concurrently on multiple memory blocks, applying a series of erase pulses to target memory cells across multiple memory blocks and planes, reducing the throughput impact and erase time overhead.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Productivity

If single-block erase operations are used, then memory device simplicity is maintained, but throughput is significantly impacted and erase time overhead increases

Engineering Contradiction:
ImprovethroughputVSAvoiderase operation complexity
Core Design Contradiction:
ProductivityVSDevice complexity

Solution Approach 1:

The patent combines multiple single-block erase operations into a single multi-block erase operation that can concurrently erase multiple memory blocks across different memory planes. This merging of operations reduces the total erase time overhead and improves throughput by approximately 50% compared to sequential single-block erases, while the controller manages the complexity through unified command handling

Inventive Principle:
Principle #5Merging (Combining)

2Duration of action of moving object

If single-block erase operations are used, then operation simplicity is maintained, but erase time overhead increases substantially

Engineering Contradiction:
Improveerase timeVSAvoiderase operation simplicity
Core Design Contradiction:
Duration of action of moving objectVSEase of operation

Solution Approach 1:

The patent extends the erase operation from a single memory plane to multiple memory planes simultaneously, adding a dimensional aspect to the erase process. This multi-plane concurrent erase capability reduces the total erase time by performing erases in parallel across different planes, while the controller abstracts the complexity through standardized multi-plane erase commands

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

3Productivity

If multi-block erase operations are implemented, then throughput improves by approximately 50%, but operation complexity increases

Engineering Contradiction:
ImprovethroughputVSAvoiderase operation complexity
Core Design Contradiction:
ProductivityVSDevice complexity

Solution Approach 1:

The patent creates a universal erase operation that can handle both single-block and multi-block erases across multiple memory planes through a unified command interface. The controller implements multi-functionality by managing concurrent erase operations on different memory blocks and planes using standardized protocols, thereby improving throughput while keeping the interface simple for the host system

Inventive Principle:
Principle #6Universality (Multi-functionality)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The multi-block erase operation significantly reduces the throughput impact by approximately 50% compared to single-block erase operations, enhancing memory sub-system performance by concurrently erasing a larger portion of the memory array.

Implementation Method 1

causes a set of erase pulses to be applied to a first set of target memory cells of a first memory block and a second set of target memory cells of a second memory block concurrently

Methodology Applied
Scientific EffectElectrical pulse:

Data Source

PatentUS20250258602A1Operation to erase multiple memory blocks of multiple memory planes
Publication Date: 2025.08.14 MICRON TECHNOLOGY INC
  • US20250258602A1 patent drawing
  • US20250258602A1 patent drawing
  • US20250258602A1 patent drawing

AI summary

A memory sub-system to initiate an erase operation to erase a first set of memory cells of a first memory block of a first memory plane and a second set of memory cells of a second memory block of a second memory plane of a memory device. A set of erase pulses of the erase operation are caused to be applied to the first set of memory cells of the first memory block and the second set of memory cells of the second memory block concurrently. One or more erase verify sub-operations of the erase operation are executed to verify the first set of memory cells and the second set of memory cells are erased.