Multi-Plane Shower Head for Uniform Film Deposition
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Solution Overview
Problem
Existing substrate processing technologies face challenges in achieving uniform film thickness and process uniformity on nonplanar surfaces, particularly in semiconductor device manufacturing, where film quality, contamination levels, defect density, and step coverage are critical.
Innovation Solution
A substrate processing apparatus with a shower head featuring multiple injection surfaces at different distances from the substrate, including a circular ring-shaped second injection surface closer to the substrate, to supply source gas uniformly across the substrate surface.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If a conventional single-distance shower head is used, then the structure is simple, but the film thickness uniformity deteriorates
Solution Approach 1:
The shower head is divided into multiple injection surfaces (first injection surface and second injection surface) at different distances from the substrate. Each surface has injection holes positioned at specific distances, creating segmented gas injection zones that collectively improve film thickness uniformity across the substrate surface.
Solution Approach 2:
The invention transitions from a single-plane injection structure to a multi-plane three-dimensional injection structure. By positioning injection surfaces at different distances (first distance and second distance) from the substrate, the system adds a vertical dimension to gas distribution, enabling better coverage and uniformity on nonplanar surfaces.
2Manufacturing precision
If gas is injected from a single distance, then the injection system is simple, but the process uniformity on nonplanar surfaces deteriorates
Solution Approach 1:
Different regions of the substrate receive gas injection at different distances. The first injection surface targets specific areas at the first distance, while the second injection surface targets other areas at the second distance, providing locally optimized gas distribution that enhances process uniformity across nonplanar surfaces.
Solution Approach 2:
The injection system provides dynamic gas distribution by utilizing multiple injection surfaces at different distances. This creates variable gas flow paths and injection angles that adapt to the nonplanar substrate topography, improving process uniformity across different surface regions.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution enhances process uniformity and achieves a more uniform film thickness, improving semiconductor device performance by adjusting the gas injection pattern to address non-uniformity issues.
Implementation Method 1
a shower head located above the support member to supply a source gas toward the support member, wherein the shower head includes a first injection surface located at a position separated from the upper surface of the substrate placed on the support member by a first distance, and provided with outlets of first injection holes to inject the source gas; and a second injection surface located at a position separated from the upper surface of the substrate placed on the support member by a second distance being different from the first distance, and provided with outlets of second injection holes to inject the source gas
Data Source
AI summary
Disclosed is a substrate processing apparatus and method. The substrate processing apparatus includes a process chamber (10) providing an internal space, in which a process is carried out onto a substrate; a support member (30) installed in the process chamber (10) to support the substrate; and a shower head (20) located above the support member (30) to supply a source gas toward the support member (30), wherein the shower head (20) includes a first injection surface (24) located at a position separated from the upper surface of the substrate by a first distance, and provided with outlets of first injection holes (24a) to inject the source gas; and a second injection surface (26) located at a position separated from the upper surface of the substrate by a second distance being different from the first distance, and provided with outlets of second injection holes (26a) to inject the source gas.