Multi-Polarity Optoelectronic Device for Broad Spectrum Emission
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Solution Overview
Problem
Existing optoelectronic devices have limitations in producing a wide spectrum of emission or reception wavelengths, as they typically rely on single or multiple quantum well structures, and the use of photoluminescent materials to achieve broader spectra increases costs without guaranteed results.
Innovation Solution
The development of optoelectronic devices with multiple active regions of differing polarities, formed using III-V and II-VI semiconductor materials, allows for simultaneous epitaxial growth of first and second active regions on substrates with specific semiconductor portions, enabling emission or capture of electromagnetic radiation at multiple wavelengths without the need for additional photoluminescent materials.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If photoluminescent materials are used to broaden emission spectrum, then emission spectrum coverage is improved, but device cost increases
Solution Approach 1:
The device is divided into multiple independent active regions, each with different polarities and emitting at different wavelengths. This segmentation eliminates the need for photoluminescent conversion materials while achieving broad spectrum coverage through direct emission from multiple quantum wells with varying bandgaps.
Solution Approach 2:
Multiple active regions with different polarities are integrated into a single device structure, enabling the device to emit multiple wavelengths simultaneously. This multi-functional approach replaces the need for separate light sources or photoluminescent conversion layers, reducing overall device complexity and cost.
2Adaptability or versatility
If multiple quantum well structures are used to achieve wide spectrum emission, then emission spectrum coverage is improved, but device complexity increases
Solution Approach 1:
Multiple quantum well structures with different polarities are merged into a single integrated device architecture. The active regions are formed in alternating polarities within the same semiconductor layer structure, simplifying manufacturing while achieving multi-wavelength emission without requiring separate device assemblies.
3Device complexity
If single active region structure is used, then device simplicity is maintained, but emission spectrum coverage is limited
Solution Approach 1:
Different regions of the semiconductor layer are assigned different local qualities through alternating polarities. Each local region (active region) is optimized for specific wavelength emission based on its polarity and quantum well composition, while the overall device maintains a relatively simple planar structure that is easier to manufacture than three-dimensional alternatives.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables the production of devices with broadened emission or reception spectra, characteristic of white light, without the requirement for phosphor layers, thus reducing costs and enhancing spectral coverage.
Implementation Method 1
first and second active regions suitable for emitting or capturing electromagnetic radiation
Implementation Method 2
first and second active regions suitable for emitting or capturing electromagnetic radiation
Implementation Method 3
growing by epitaxy simultaneously the first active regions in contact with the first semiconductor portions and the second active regions in contact with the second semiconductor portions
Data Source
Figure 1~3
Figure 4A~4E
Figure 5A~5E
AI summary
The invention relates to an optoelectronic device (40) comprising first and second active regions (56A, 56B) adapted to emit or capture electromagnetic radiation and comprising at least a first semiconductor material comprising predominantly a first compound selected from compounds III-V, II-VI and their mixtures, the first active regions (56A) having a first polarity and the second active regions (56B) having a second polarity different from the first polarity.