Multi-Portion AlGaN Nitride Region for Lower Leakage Current
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Solution Overview
Problem
Existing nitride semiconductors face challenges in achieving high quality due to defects caused by dislocations, which affect the leakage current and overall performance of semiconductor devices.
Innovation Solution
A nitride semiconductor structure is proposed, comprising a base body and a nitride member with specific regions of varying oxygen concentration and thickness, where the first nitride region with a higher oxygen concentration is thinner than the second nitride region with a lower oxygen concentration, effectively suppressing dislocation propagation and defect formation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a uniform nitride region structure is used, then the manufacturing process is simple, but dislocation propagation and defect formation occur, leading to high leakage current
Solution Approach 1:
The nitride region is divided into multiple distinct portions: a first nitride region with higher oxygen concentration and thinner thickness, and a second nitride region with lower oxygen concentration and greater thickness. This segmentation allows each portion to serve different functional purposes in suppressing dislocation propagation while maintaining manufacturing feasibility.
Solution Approach 2:
Different portions of the nitride region are assigned different local properties: the first portion has higher oxygen concentration and smaller thickness optimized for blocking dislocation propagation, while the second portion has lower oxygen concentration and larger thickness optimized for reducing defect density. This local differentiation resolves the contradiction between reliability and structural complexity.
2Reliability
If the nitride region thickness is increased to suppress dislocation propagation, then leakage current is reduced, but defect density increases due to oxygen accumulation
Solution Approach 1:
The nitride region is segmented into a first portion with higher oxygen concentration and thinner thickness, and a second portion with lower oxygen concentration and greater thickness. This segmentation allows the structure to achieve both dislocation suppression and defect reduction by distributing oxygen concentration and thickness differently across portions.
Solution Approach 2:
Different local properties are assigned to different portions: the first portion has higher oxygen concentration and smaller thickness for dislocation blocking, while the second portion has lower oxygen concentration and larger thickness for defect density reduction. This local quality differentiation resolves the contradiction between leakage current suppression and defect density control.
3Reliability
If oxygen concentration is increased throughout the nitride region to suppress dislocation propagation, then leakage current is reduced, but defect density increases due to excessive oxygen accumulation
Solution Approach 1:
Oxygen concentration is differentiated locally across different portions of the nitride region. The first portion has higher oxygen concentration (first oxygen concentration) optimized for dislocation propagation suppression, while the second portion has lower oxygen concentration (second oxygen concentration) optimized for reducing defect density. This local quality control resolves the contradiction between leakage current and defect density.
Solution Approach 2:
The nitride region is segmented into portions with different oxygen concentrations, allowing each segment to optimize its local properties for specific functions without causing excessive oxygen accumulation throughout the entire structure.
Data Source
AI summary
According to one embodiment, a nitride semiconductor includes a base body, and a nitride member. The nitride member includes a first nitride region including Alx1Ga1-x1N (0<x1≤1), and a second nitride region including Alx2Ga1-x2N (0≤x2<1, x2<x1). The first nitride region is between the base body and the second nitride region. The first nitride region includes a first portion and a second portion. The second portion is between the first portion and the second nitride region. An oxygen concentration in the first portion is higher than an oxygen concentration in the second portion. The oxygen concentration in the second portion is not more than 1×1018/cm3.A first thickness of the first portion in a first direction from the first to second nitride regions is thinner than a second thickness of the second portion in the first direction.