Multi-Program Command for Nonvolatile Memory Erase State Management
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Solution Overview
Problem
Highly integrated semiconductor storage devices face issues with data corruption and reduced reliability due to the increased demand for high capacity and miniaturization, leading to unforeseen problems such as data loss and error operations.
Innovation Solution
An operation method for a storage device that includes a nonvolatile memory and a memory controller, which transmits a multi-program command to program memory cells connected to multiple word lines using dummy data, ensuring that memory cells in an erase state are not neglected, thereby improving the reliability of the storage device.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If the scale of storage devices is reduced to achieve high integration, then production cost is reduced and capacity is increased, but data corruption susceptibility increases and reliability is reduced
Solution Approach 1:
The patent applies preliminary action by performing a multi-program operation on memory blocks in an erase state before they are used for normal data storage. The memory controller identifies memory blocks that are in the erase state and executes a multi-program command to program multiple word lines within these blocks, transitioning them from the erase state to a programmed state. This preliminary programming action ensures that memory blocks are properly initialized and reduces the likelihood of data corruption when these blocks are subsequently used for storing actual data, thereby improving reliability without reducing storage capacity.
2Speed
If memory cells are left in an erase state, then operation speed is maintained, but data corruption occurs and reliability is reduced
Solution Approach 1:
The patent performs preliminary programming of memory blocks in the erase state through multi-program operations, so that when these blocks are subsequently accessed for normal operations, they are already in a programmed state. This eliminates the need to leave memory cells in the erase state during operation, thereby preventing data corruption while maintaining operation speed. The preliminary action ensures that memory blocks are ready for immediate use without reliability issues.
3Reliability
If traditional program operations are used on memory blocks in erase state, then data corruption is prevented, but operation speed is reduced and productivity is lowered
Solution Approach 1:
The patent merges multiple programming operations into a single multi-program command. Instead of executing separate program commands for each word line within a memory block, the memory controller issues a multi-program command that simultaneously programs multiple word lines (e.g., first word line, second word line, third word line) within the same memory block. This combining of operations maintains data integrity by ensuring thorough programming of memory blocks in erase state, while significantly improving operation efficiency by reducing the number of command cycles required compared to traditional sequential programming methods.
Data Source
AI summary
An operation method of a storage device including a nonvolatile memory and a memory controller controlling the nonvolatile memory, includes transmitting a multi-program command to the nonvolatile memory by the memory controller; and programming memory cells connected to two or more word lines by the nonvolatile memory in response to the multi-program command.