Multi-Reactor Vapor Phase Growth Apparatus Independent Parameter Control
Solution Overview
Problem
Current vapor phase growth methods for forming high-quality semiconductor films, particularly GaN-based films, face challenges in efficiently controlling process parameters across multiple reactors, leading to variations in film characteristics such as thickness and composition.
Innovation Solution
A vapor phase growth apparatus and method that utilize multiple reactors with independent control of process gas flow rates and parameters, including group-III and group-V elements, rotation speed, and temperature, allowing for simultaneous film growth with adjusted characteristics across multiple substrates.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If multiple reactors are used to improve productivity, then film production quantity increases, but control of process parameters becomes more difficult leading to variations in film characteristics
Solution Approach 1:
The patent divides the gas supply system into separate main gas supply paths for each reactor, with independent flow rate controllers for each path. This segmentation allows each reactor to have independent control over process gas flow rates, enabling precise control of film characteristics while maintaining high productivity through simultaneous operation of multiple reactors.
Solution Approach 2:
The patent implements independent control of process parameters (flow rates, temperatures, rotation speeds) for each reactor through dedicated controllers. This allows optimization of parameters for each individual reactor to achieve consistent film characteristics across all reactors, resolving the variation problem that arises when using multiple reactors.
2Productivity
If process gas is supplied to multiple reactors simultaneously, then production efficiency increases, but variations in film thickness and composition occur due to difficulty in controlling process parameters
Solution Approach 1:
The gas supply system is segmented into separate main gas supply paths for each reactor, with each path having its own flow rate controller. This allows simultaneous gas supply to multiple reactors while maintaining independent and precise control of flow rates for each reactor, preventing variations in film thickness and composition.
Solution Approach 2:
The patent employs controllers that monitor and adjust process parameters for each reactor independently. This feedback control mechanism ensures that variations in film characteristics are detected and corrected, maintaining consistent film thickness and composition across all reactors operating simultaneously.
3Manufacturing precision
If independent control of process parameters is implemented for each reactor, then film characteristic consistency improves, but system complexity increases
Solution Approach 1:
The control system is segmented into independent control units for each reactor, with each unit managing its own main gas supply path and process parameters. This modular approach achieves precise control of film characteristics while organizing system complexity into manageable, standardized modules that can be replicated across multiple reactors.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enables precise control and matching of film characteristics across multiple substrates, improving the consistency and quality of semiconductor films grown in multiple reactors.
Implementation Method 1
a heater provided in each of the n reactors and heating each of the plurality of substrates
Implementation Method 2
a rotary driver provided in each of the n reactors and rotating each of the plurality of substrates
Implementation Method 3
the thermal reaction of the source gas occurs in the surface of the wafer and an epitaxial single-crystal film is formed on the surface of the wafer
Implementation Method 4
an epitaxial growth technique which grows a single-crystal film on a substrate
Data Source
AI summary
A vapor phase growth apparatus according to an embodiment includes, n reactors performing a deposition process for a plurality of substrates at the same time, a first main gas supply path distributing a predetermined amount of first process gas including a group-III element to the n reactors at the same time, a second main gas supply path distributing a predetermined amount of second process gas including a group-V element to the n reactors at the same time, a controller controlling a flow rate of the first and second process gas, on the basis of control values of the flow rates of the first and second process gas supplied to the n reactors, and independently controlling predetermined process parameter independently set for each of the n reactors on the basis of control values, rotary drivers, and a heater.