Multi-RF Substrate Support for High-Temperature Thin Film Control

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Solution Overview

Problem

Conventional substrate supports for thin film processing face issues with thermal deformation, poor corrosion resistance, and low sinterability at high temperatures, leading to film quality inconsistencies and cracking.

Innovation Solution

The substrate support independently controls RF electric power and heater temperature through a disposition structure of multiple RF electrodes and a heater electrode, eliminating the need for a separate connection structure and preventing cracking by ensuring sinterability even at high temperatures.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Ease of manufacture

If a conventional metal heater is used, then the heater can be manufactured with simple materials, but it suffers from thermal deformation and poor corrosion resistance at high temperatures

Engineering Contradiction:

Improveheater manufacturing simplicityVSAvoidheater corrosion resistance and thermal stability

Core Design Contradiction:

Ease of manufactureVSReliability

Solution Approach 1:

The heater is constructed using a composite structure consisting of an AlN (aluminum nitride) substrate and a metal heating element. The AlN substrate provides excellent thermal conductivity and high plasma corrosion resistance, while the metal layer provides heating functionality. This composite material approach resolves the contradiction by combining materials with complementary properties to achieve both manufacturability and high-temperature reliability.

Inventive Principle:

Principle #40Composite materials

2Device complexity

If RF electrodes and heater are connected using a conventional connection structure, then the device structure remains simple, but cracking occurs due to weak sinterability at high temperatures

Engineering Contradiction:

Improveconnection structure simplicityVSAvoidsinterability at high temperature

Core Design Contradiction:

Device complexityVSReliability

Solution Approach 1:

The connection structure merges the RF electrode and heater into a single integrated component rather than separate parts requiring connection. This integration eliminates the need for separate connection structures that would have poor sinterability, while maintaining device functionality. The merging principle resolves the contradiction by combining functions into one robust structure that can withstand high temperatures without cracking.

Inventive Principle:

Principle #5Merging (Combining)

3Device complexity

If a single RF electrode structure is used, then the device structure remains simple, but independent control of RF power and temperature is not achieved, affecting film quality

Engineering Contradiction:

Improveelectrode structure simplicityVSAvoidfilm quality control

Core Design Contradiction:

Device complexityVSManufacturing precision

Solution Approach 1:

The RF electrode system is segmented into multiple independent RF electrodes (first RF electrode, second RF electrode, third RF electrode) that can be controlled independently. Each RF electrode can be adjusted to optimize plasma distribution and power coupling, while the heater provides independent temperature control. This segmentation enables precise control of both RF power and temperature parameters, resolving the contradiction by dividing the electrode system into controllable segments that maintain overall functionality while enabling independent parameter optimization.

Inventive Principle:

Principle #1Segmentation

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This solution improves thin film quality by allowing precise control of RF power and temperature, preventing cracking due to heat, and ensuring sinterability at temperatures up to 650 degrees Celsius or higher.

Implementation Method 1

the first outer RF electrode and the second outer RF electrode perform non-contact capacitive coupling

Methodology Applied

Scientific EffectCapacitive coupling: Capacitance

Implementation Method 2

a heater electrode disposed between the RF electrode and the lower portion surface

Methodology Applied

Scientific EffectJoule heating: Joule Heating

Data Source

PatentUS20250075323A1Substrate support, thin film processing device, and thin film deposition control method using the same

Publication Date: 2025.03.06 SAMSUNG ELECTRONICS CO LTD

AI summary

A substrate support according to an embodiment includes: a body portion that has a substrate disposition surface at an upper portion thereof; an RF electrode that is disposed inside the body portion; a heater electrode that is disposed below the RF electrode; and a shaft that is formed on a lower portion surface disposed at an opposite side of the substrate disposition surface and has a hollow. The RF electrode includes a first outer RF electrode surrounding the outside of the substrate disposition surface, an inner RF electrode disposed parallel to the substrate disposition surface below the substrate disposition surface, a second outer RF electrode disposed between the inner RF electrode and the heater electrode, an inner electrode conductor having one end connected to the inner RF electrode to be disposed to penetrate the shaft, and an outer electrode conductor having one end connected to the second outer RF electrode to be disposed to penetrate the shaft, and the first outer RF electrode, the inner RF electrode, and the second outer RF electrode are spaced apart from each other to have a non-contact structure.