Multi-ridge Semiconductor Laser with Varying Insulating Layer Thickness
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Solution Overview
Problem
Existing multi-stripe semiconductor laser elements face manufacturing difficulties and wavelength adjustment challenges due to complex structures, making it hard to produce simple and efficient light emitting elements that emit laser beams with multiple wavelengths.
Innovation Solution
A semiconductor laser element with a multilayer structure comprising a substrate, semiconductor layers, an insulating layer, and a metal layer, where each light emitting portion has a ridge waveguide with varying distances from the active region to the metal layer, allowing for the emission of laser beams with different wavelengths by adjusting the thickness and width of the insulating and semiconductor layers.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If the concentration of semiconductor in active layer is varied to emit laser beams of different wavelengths, then multiple wavelengths can be emitted, but manufacturing complexity increases and wavelength adjustment becomes difficult
Solution Approach 1:
The patent applies local quality by varying the thickness of the insulating layer at different lateral positions (different ridges) while keeping the semiconductor layer composition uniform. This local structural variation in the insulating layer thickness creates different optical path lengths and confinement effects, enabling different emission wavelengths from different ridges without requiring complex semiconductor composition grading. The insulating layer thickness becomes the local parameter that controls wavelength, simplifying manufacturing compared to varying semiconductor concentration.
2Adaptability or versatility
If the concentration of semiconductor in active layer is varied to emit laser beams of different wavelengths, then multiple wavelengths can be emitted, but structure complexity increases
Solution Approach 1:
The patent uses local quality by making the insulating layer thickness vary locally across different ridges while maintaining a simple overall layered structure. Each ridge has a different insulating layer thickness, creating local optical property differences that enable multi-wavelength emission. This approach avoids the need for complex semiconductor composition profiles or multiple separate laser structures, achieving wavelength diversity through a simple parameter variation in one layer.
3Adaptability or versatility
If the distance from active region to metal layer is varied to control wavelength, then wavelength tuning is achieved, but manufacturing precision requirements increase
Solution Approach 1:
The patent applies parameter changes by systematically varying the insulating layer thickness parameter across different ridges. This single parameter change (insulating layer thickness) directly controls the optical confinement and effective refractive index, thereby tuning the emission wavelength. The method transforms a complex multi-parameter optimization problem into a single-parameter control problem, making wavelength adjustment more manageable and less sensitive to manufacturing tolerances.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This structure enables the efficient emission of multiple laser beams with varying wavelengths, reducing speckle noise in applications like laser scanning projectors and simplifying the manufacturing process by using a general layer-stacking method.
Implementation Method 1
an active region, for emitting the laser beam by stimulated emission, is formed in the semiconductor layer
Data Source
AI summary
A light emitting element (semiconductor laser element) includes a multilayer structure in which a substrate, semiconductor layers to, an insulating layer, and a metal layer are stacked in order. The light emitting element includes a plurality of light emitting portions each of which emits a laser beam. The plurality of light emitting portions each include a ridge (ridge waveguide). The distance from a specific position in an active region in at least one of the light emitting portions to an inner surface of the metal layer is different from that in another of the light emitting portions.