Multi-Stage Resist Patterning via Acid-Polarity Shift
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Solution Overview
Problem
Current pattern formation methods struggle to create multi-stage resist patterns with high resolution and fine features, particularly in semiconductor manufacturing, where traditional methods face challenges in forming intricate patterns using KrF or ArF exposure apparatuses.
Innovation Solution
A pattern formation method involving the sequential use of two actinic ray-sensitive or radiation-sensitive resin compositions, each with acid-enhanced polarity, allowing for the formation of multi-stage resist patterns through controlled exposure and development steps, including heating processes, to achieve precise pattern formation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If traditional single-stage resist patterning is used, then the process is simple and fast, but the resolution and fine feature formation capability are insufficient for advanced semiconductor manufacturing
Solution Approach 1:
The patterning process is divided into multiple stages: first forming a mandrel pattern, then forming a spacer pattern around it, and finally removing the mandrel to create the final high-resolution pattern. This segmentation allows each stage to be optimized independently, achieving high resolution through the combined effect of multiple simpler steps rather than attempting single-stage high-resolution patterning
Solution Approach 2:
The mandrel pattern is formed in advance as a preliminary structure that guides the subsequent spacer formation. This preliminary action enables precise control of the final pattern dimensions and spacing, as the spacer width is determined by the mandrel dimensions and deposition thickness rather than direct lithographic patterning
2Manufacturing precision
If multi-stage resist patterns are formed using traditional methods, then fine features can be created, but the process requires multiple separate lithography steps increasing time and complexity
Solution Approach 1:
The mandrel formation and spacer formation processes are merged into a single lithography step. The resist pattern serves dual purposes: as the mandrel structure and as the spacer definition layer. This merging eliminates the need for separate lithography steps that would traditionally be required to create multi-stage patterns, reducing process time while maintaining fine feature capability
Solution Approach 2:
The resist pattern acts as an intermediary structure that is formed once and then serves multiple functions: defining the mandrel, guiding spacer deposition, and ultimately becoming part of the final pattern or being removed. This intermediary approach allows multiple pattern stages to be created from a single lithographic exposure, reducing the number of lithography steps required
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enables the creation of complex multi-stage resist patterns with improved resolution and fine feature sizes, suitable for advanced semiconductor manufacturing, by leveraging the solubility changes induced by acid action in the resin compositions.
Implementation Method 1
a resin of which, due to a polarity being increased by an action of an acid, a solubility decreases with respect to a developer which includes an organic solvent
Implementation Method 2
A pattern formation method involving the sequential use of two actinic ray-sensitive or radiation-sensitive resin compositions, each with acid-enhanced polarity, allowing for the formation of multi-stage resist patterns through controlled exposure and development steps, including heating processes
Data Source
AI summary
A pattern formation method includes step (i) of forming a first negative type pattern on a substrate by performing step (i-1) of forming a first film on the substrate using an actinic ray-sensitive or radiation-sensitive resin composition, step (i-2) of exposing the first film and step (i-3) of developing the exposed first film in this order; step (iii) of forming a second film at least on the first negative type pattern using an actinic ray-sensitive or radiation-sensitive resin composition (2); step (v) of exposing the second film; and step (vi) of developing the exposed second film and forming a second negative type pattern at least on the first negative type pattern.