Multi-Stage Substrate Holder with Embedded Electrodes for Plasma Processing
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Solution Overview
Problem
Current batch type plasma processing apparatuses face challenges in achieving high productivity and precise plasma control, particularly in forming films on multiple substrates simultaneously, as they have lower film formation rates compared to single-wafer type systems and lack precise plasma control.
Innovation Solution
A batch type plasma processing apparatus with a multi-stage substrate holder and embedded electrode layers, where RF power is supplied to the first electrode layers to generate plasma between stages, allowing for precise plasma control and high in-plane uniformity, similar to single-wafer type systems, while accommodating multiple substrates for simultaneous film formation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If a batch type plasma processing apparatus is used to process multiple substrates simultaneously, then productivity is improved, but film formation rate and plasma control precision deteriorate compared to single-wafer type systems
Solution Approach 1:
The substrate holder is divided into multiple stages (first stage, second stage, third stage) arranged in the height direction, with each stage capable of independent plasma generation through embedded electrode layers. This segmentation allows simultaneous processing of multiple substrates while maintaining individual plasma control for each stage, resolving the contradiction between batch processing productivity and plasma control precision.
Solution Approach 2:
Each stage of the substrate holder is equipped with its own electrode layers (first electrode layer and second electrode layer) that can generate plasma locally. This local quality approach enables precise plasma control for each substrate position independently, even while processing multiple substrates simultaneously, thus maintaining manufacturing precision while improving productivity.
2Productivity
If multiple substrates are processed simultaneously in a batch type apparatus, then productivity increases, but in-plane uniformity of film formation deteriorates
Solution Approach 1:
The substrate holder is divided into multiple stages (first stage, second stage, third stage) arranged in the height direction, with each stage capable of independent plasma generation through embedded electrode layers. This segmentation allows simultaneous processing of multiple substrates while maintaining individual plasma control for each stage, resolving the contradiction between batch processing productivity and plasma control precision.
Solution Approach 2:
Each stage of the substrate holder is equipped with its own electrode layers (first electrode layer and second electrode layer) that can generate plasma locally. This local quality approach enables precise plasma control for each substrate position independently, even while processing multiple substrates simultaneously, thus maintaining manufacturing precision while improving productivity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The apparatus achieves high productivity and precise plasma processing performance equivalent to single-wafer type systems, enabling efficient film formation on multiple substrates with improved in-plane uniformity and productivity.
Implementation Method 1
activates the gas by a magnetic field component generated from an antenna to generate plasma
Implementation Method 2
a magnetic field component generated from an antenna to generate plasma
Implementation Method 3
including a heating part that heats the plurality of substrates
Data Source
AI summary
A plasma processing apparatus includes: a substrate holder configured to place a plurality of substrates in a multi-stage structure in a height direction on the substrate holder; and a processing container in which the substrate holder is accommodated and including a heating part that heats the plurality of substrates, wherein the substrate holder is provided with a plurality of stages made of a dielectric material, and a first electrode layer and a second electrode layer embedded in the plurality of stages.