Multi-step Pre-heating for High Stressed Thin Film Peeling
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Solution Overview
Problem
High stress in silicon nitride thin films leads to peeling issues due to poor temperature rising capability in conventional single-step pre-heating processes, resulting in either severe peeling or particle issues during semiconductor processes.
Innovation Solution
A multi-step pre-heating process is implemented, where the wafer is lifted to position it closer to inductive coils, allowing for a low, medium, and high power pre-heating step sequence to rapidly and steadily increase the wafer temperature, preventing both peeling and particle issues.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Device complexity
If a single-step pre-heating process is used, then the process is simple, but the temperature rising capability is poor causing peeling issues
Solution Approach 1:
The pre-heating process is divided into multiple steps with different power levels (low power first step, medium power second step, high power third step) to progressively heat the wafer. This segmentation allows controlled temperature rise that prevents peeling while avoiding particle generation, resolving the contradiction between process simplicity and peeling prevention reliability.
2Object-generated harmful factors
If low pre-heating power is used, then particle issues are reduced, but temperature rising capability is insufficient causing peeling
Solution Approach 1:
The pre-heating process uses dynamic power adjustment with three distinct power levels applied in sequence. The power level changes over time (low→medium→high) to match the wafer's heating stages, enabling both adequate temperature rise and particle control. This dynamic approach resolves the contradiction between particle reduction and temperature increase.
3Temperature
If high pre-heating power is used, then temperature rising capability is improved, but particle issues increase
Solution Approach 1:
The process applies low power pre-heating first to prepare the wafer, then gradually increases to medium and high power in subsequent steps. This preliminary low-power action prevents thermal shock and particle generation early in the heating process, while still achieving the required final temperature. The sequential power application resolves the contradiction between temperature rise and particle control.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The multi-step pre-heating process ensures a consistent and rapid temperature increase, effectively addressing the peeling and particle issues, thereby improving the yield of subsequent HDPCVD processes.
Implementation Method 1
a plurality of inductive coils 40 and 42 respectively disposed on the top and sides of the chamber body 32
Implementation Method 2
power is applied to the top RF power 44 and the side RF power 46, and gases such as oxygen or argon is implanted into the chamber body 32 to raise the temperature of the wafer 20
Data Source
AI summary
A wafer including a high stressed thin film thereon is lifted, and a pre-heating process is performed while the wafer is lifted. Subsequently, a dielectric layer is deposited on the high stressed thin film.