Multi-Tier Valve Manifold Layout for Dead Volume Reduction

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Solution Overview

Problem

Conventional valve manifolds in semiconductor manufacturing suffer from poor gas mixing due to long flow paths and dead volumes created by o-rings, leading to particulate formation and degradation of silicon wafers.

Innovation Solution

A valve manifold design featuring multiple tiers with strategically aligned through-holes and channels forming a single, continuous flow path, along with gaskets for sealing, to minimize dead volumes and enhance gas mixing.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Quantity of substance

If conventional valve manifolds use long flow paths for gas delivery, then gas can be delivered to the reaction chamber, but gas mixing becomes poor and dead volumes increase

Engineering Contradiction:
Improvegas mixing efficiencyVSAvoidflow path length
Core Design Contradiction:
Quantity of substanceVSLength of stationary object

Solution Approach 1:

The valve manifold is divided into multiple tiers (first tier, second tier, third tier) with through-holes and channels at different levels. This segmentation allows the flow path to be organized in discrete stages, enabling effective gas mixing within a compact vertical arrangement rather than requiring a long horizontal path.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The patent transitions from a conventional horizontal flow path to a vertical multi-tiered structure. By utilizing the vertical dimension with tiers stacked above each other, the manifold achieves compact length while maintaining adequate flow path for gas mixing through the vertically arranged through-holes and channels.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

2Reliability

If conventional valve manifolds use o-rings for sealing, then sealing is achieved, but dead volumes are created that reduce temporal separation of pulsed gases

Engineering Contradiction:
Improvesealing effectivenessVSAvoiddead volume
Core Design Contradiction:
ReliabilityVSVolume of stationary object

Solution Approach 1:

The patent removes o-rings from the sealing system and replaces them with gaskets that conform to the tier surfaces. This extraction of the problematic o-ring element eliminates the dead volumes associated with o-ring sealing while maintaining effective sealing through the gasket-tier interface.

Inventive Principle:
Principle #2Taking out (Extraction)

Solution Approach 2:

Gaskets are introduced as intermediary sealing elements between the tiers. These gaskets provide sealing functionality without creating the dead volume problems of o-rings, as they can be designed to conform precisely to the tier surfaces and eliminate stagnant gas pockets.

Inventive Principle:
Principle #24Intermediary (Mediator)

3Productivity

If dead volumes are present in the valve manifold, then gas flow is maintained, but reactions between pulsed gases occur causing particulate formation and wafer degradation

Engineering Contradiction:
Improvesemiconductor fabrication qualityVSAvoidparticulate formation
Core Design Contradiction:
ProductivityVSObject-generated harmful factors

Solution Approach 1:

The patent converts the potential harm of dead volumes into benefit by eliminating them through gasket sealing. This prevents unwanted gas reactions and particulate formation, thereby protecting the wafer from degradation and improving fabrication quality.

Inventive Principle:
Principle #22Blessing in disguise (Convert harm into benefit)

Data Source

PatentUS20240142014A1Systems and apparatus for a valve manifold
Publication Date: 2024.05.02 ASM IP HLDG BV
  • US20240142014A1 patent drawing
  • US20240142014A1 patent drawing
  • US20240142014A1 patent drawing

AI summary

Various embodiments of the present technology may provide a valve manifold having a plurality of tiers with various through-holes and channels. The plurality of tiers may be connected together such that the through-holes and channels form a single, continuous flow path.