Multi-Voltage Generator Circuit for Flash Memory
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Solution Overview
Problem
Conventional flash memory devices require separate voltage generators for programming and read operations, leading to increased silicon real estate and reduced integration due to the generation of high voltages for unselected wordlines during program or verify operations.
Innovation Solution
A multi-voltage generator circuit that integrates the functionality of programming pass voltage (Vpass) and read voltage (Vread) generators, utilizing an oscillator circuit, charge pump unit, and detection unit to selectively generate and maintain the required voltages based on control signals, reducing the need for separate voltage generators and optimizing silicon usage.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If separate voltage generators are used for programming pass voltage (Vpass) and read voltage (Vread), then each voltage can be generated independently with dedicated circuitry, but the silicon real estate increases and integration is reduced
Solution Approach 1:
The patent combines separate Vpass and Vread voltage generators into a single integrated multi-voltage generator circuit. This unified circuit uses a common charge pump unit that can be configured to generate different voltage levels (Vpass for programming operations and Vread for read operations) based on control signals, thereby reducing the total number of voltage generator circuits while maintaining the ability to provide both voltage types reliably
Solution Approach 2:
The multi-voltage generator circuit is designed to perform multiple functions by generating different voltages (Vpass and Vread) from a single circuit structure. The charge pump unit can operate in different modes controlled by control signals to produce the required voltage levels for various memory operations, making the circuit universally applicable to both programming and reading operations without requiring separate dedicated generators for each function
2Adaptability or versatility
If separate voltage generators are used for Vpass and Vread, then each voltage generator can be optimized for its specific operation, but silicon real estate increases
Solution Approach 1:
The patent merges the Vpass and Vread voltage generation functions into a single circuit footprint, reducing silicon real estate. The integrated circuit uses shared components such as a common charge pump unit, oscillator circuit, and detection unit that can be reconfigured through control signals to generate the appropriate voltage for different operations, thereby maintaining versatility while reducing area
Solution Approach 2:
The voltage generator circuit incorporates dynamic reconfiguration capabilities through control signals that can switch the charge pump unit between different operating modes. This allows the same physical circuit to adapt and generate different voltages (Vpass or Vread) as needed, providing voltage generation flexibility without requiring separate static dedicated generators for each voltage type
3Reliability
If multiple separate voltage generator circuits are used, then each voltage can be generated with dedicated circuitry, but integration is reduced
Solution Approach 1:
The patent integrates multiple voltage generation capabilities into a single circuit unit, improving integration level. The multi-voltage generator combines the functionality of separate Vpass and Vread generators by using a unified charge pump architecture that can be controlled to produce different voltages, thereby simplifying the overall device structure and improving manufacturability while maintaining reliable voltage generation for all required operations
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The integrated multi-voltage generator circuit enhances integration, reduces silicon real estate, and efficiently generates the necessary voltages for programming and read operations, improving the operational efficiency of flash memory devices.
Implementation Method 1
The charge pump unit step-ups a power supply voltage in response to an oscillating signal applied to an input to the charge pump unit
Data Source
AI summary
High voltage generator circuits and methods for operating non-volatile semiconductor memory devices are provided for use with non-volatile memory such as FLASH memory devices, to selectively generate different types of control voltages for various operating modes of non-volatile memory devices.