Multi-Wafer Electrostatic Chuck Structure for Better RF Coupling

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Solution Overview

Problem

The existing multi-wafer electrostatic chuck faces challenges in manufacturing difficulty, cost, RF coupling efficiency, and semiconductor processing efficiency due to complex sintering processes and thick insulation layers.

Innovation Solution

The electrostatic chuck design includes a chuck body, a voltage feed member, and a plurality of absorption members with independent structures, allowing for thinner insulation layers and improved RF coupling efficiency.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Strength

If the insulation layer thickness is increased to ensure structural strength, then the structural strength is improved, but the RF coupling efficiency deteriorates

Engineering Contradiction:

Improvestructural strengthVSAvoidRF coupling efficiency

Core Design Contradiction:

StrengthVSReliability

Solution Approach 1:

The electrode layer is divided into multiple layer structures arranged at intervals, allowing RF to be gradually coupled from the insulation layer side to the dielectric layer side, improving RF coupling efficiency without requiring a thick insulation layer

Inventive Principle:

Principle #1Segmentation

Solution Approach 2:

The electrode layer transitions from a single flat layer to multiple layered structures in the vertical dimension, enabling progressive RF coupling and maintaining both structural strength and RF efficiency

Inventive Principle:

Principle #17Another dimension (Dimensionality change)

2Reliability

If multiple layer structures are added to the electrode layer to improve RF coupling, then the RF coupling efficiency is improved, but the sintering process complexity increases

Engineering Contradiction:

ImproveRF coupling efficiencyVSAvoidsintering process complexity

Core Design Contradiction:

ReliabilityVSDevice complexity

Solution Approach 1:

The insulation layer, electrode layer with multiple layer structures, and dielectric layer are sintered together as an integrated base structure, simplifying the manufacturing process despite the complex electrode layer configuration

Inventive Principle:

Principle #5Merging (Combining)

Solution Approach 2:

The base is formed as a composite structure combining insulation layer, dielectric layer, and electrode layer with different materials and functions, achieving both RF efficiency and structural strength

Inventive Principle:

Principle #40Composite materials

3Reliability

If multiple layer structures are added to the electrode layer to improve RF coupling, then the RF coupling efficiency is improved, but the manufacturing cost increases

Engineering Contradiction:

ImproveRF coupling efficiencyVSAvoidmanufacturing cost

Core Design Contradiction:

ReliabilityVSEase of manufacture

Solution Approach 1:

Multiple layers are sintered together in one integrated process, reducing the number of separate manufacturing steps and lowering overall production cost despite the complex structure

Inventive Principle:

Principle #5Merging (Combining)

4Strength

If the insulation layer is made thick to ensure structural strength, then the structural strength is improved, but the etching rate deteriorates

Engineering Contradiction:

Improvestructural strengthVSAvoidetching rate

Core Design Contradiction:

StrengthVSProductivity

Solution Approach 1:

The electrode layer is segmented into multiple layer structures that enable effective RF coupling through the insulation layer, achieving high etching rates without requiring a thick insulation layer for structural support

Inventive Principle:

Principle #1Segmentation

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This design reduces manufacturing complexity and cost, enhances RF coupling efficiency, and increases semiconductor processing efficiency by allowing thinner insulation layers and more efficient DC voltage feeding.

Implementation Method 1

a direct current (DC) voltage is fed into the electrode layer to generate a Coulomb force between the electrode layer and the plurality of wafers to absorb the plurality of wafers at the dielectric layer

Methodology Applied

Scientific EffectCoulomb force: Coulomb's Law

Implementation Method 2

Radiofrequency (RF) is coupled to the electrode layer to attract plasma to bombard and etch the wafer

Methodology Applied

Scientific EffectRadiofrequency coupling: Electromagnetic Induction

Data Source

PatentUS20250023492A1Electrostatic chuck and base

Publication Date: 2025.01.16 BEIJING NAURA MICROELECTRONICS EQUIP CO LTD

AI summary

The present disclosure provides an electrostatic chuck and a base. The electrostatic chuck includes a chuck body, a voltage feed member, and a plurality of absorption members. The plurality of absorption members are arranged at the chuck body at intervals. Each absorption member includes an insulation layer, an electrode layer, and a dielectric layer arranged sequentially in a direction away from the chuck body. The voltage feed member is arranged between the absorption member and the chuck body and electrically contacts the electrode layers of the plurality of absorption members. The voltage feed member is configured to feed the DC voltage to the electrode layer of each absorption member. The plurality of wafers can be absorbed by the plurality of absorption members in a one-to-one correspondence.