Multi-wavelength Surface Plasmon Laser with Variable Cavity
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Solution Overview
Problem
Current optoelectronic integrated circuits face challenges in achieving a high degree of integration with lasers that require a small laser spot size and device downsizing, particularly in using surface plasmon lasers as light sources due to limitations in manufacturing and wavelength versatility.
Innovation Solution
A multi-wavelength surface plasmon laser is designed with a metal layer, a semiconductor layer, and adjustable reflectors forming a resonant cavity, where the active layer's thickness and resonant cavity length change along a direction to simultaneously emit surface plasmons of various wavelengths, allowing for continuous or discrete thickness changes and quantum dot regions with different diameters to achieve multiple wavelengths.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Volume of moving object
If a conventional laser is used as a light source in optoelectronic integrated circuits, then the device can achieve sufficient light emission, but the device size and laser spot size become too large for high-degree integration
Solution Approach 1:
The patent transitions from conventional bulk laser operation to surface plasmon polariton-based light emission at the metal-semiconductor interface. This dimensional change from three-dimensional bulk to two-dimensional surface confinement enables sub-micron scale device operation while maintaining light emission capability through plasmonic field confinement
Solution Approach 2:
The patent modifies the operational parameters by changing from conventional laser oscillation to surface plasmon resonance conditions. By adjusting the metal layer thickness, semiconductor layer composition, and resonant cavity dimensions, the device achieves wavelength-specific light emission at dramatically reduced size scales
2Adaptability or versatility
If a surface plasmon laser with fixed structure is used, then the device size can be reduced, but the device can only emit at a single wavelength lacking versatility
Solution Approach 1:
The patent divides the semiconductor active layer into multiple regions with different thicknesses along the light emission direction. Each thickness region corresponds to a specific resonant wavelength, enabling multi-wavelength emission from a single device structure without requiring multiple separate laser elements
Solution Approach 2:
The patent designs a single surface plasmon laser device that can emit at multiple wavelengths by incorporating varying thickness regions in the semiconductor layer. This universal structure replaces the need for multiple wavelength-specific devices, achieving multi-functionality within one compact component
3Adaptability or versatility
If the active layer thickness is made uniform, then the manufacturing process is simple, but the device can only emit at a single wavelength
Solution Approach 1:
The semiconductor active layer is segmented into multiple zones with distinct thickness values. This segmentation can be achieved through controlled growth processes or post-fabrication processing, allowing each zone to emit at a different wavelength while maintaining overall manufacturing feasibility
Solution Approach 2:
The patent applies the principle of local quality by making the active layer thickness position-dependent rather than uniform. Each local region has optimized thickness for its specific wavelength emission requirement, achieving spectral versatility through spatially varying structural properties
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration enables the efficient manufacturing of a multi-wavelength surface plasmon laser that can be used as a light source for optoelectronic integrated circuits, simplifying the optoelectronic integrated circuit structure and enabling the simultaneous emission of surface plasmons with diverse wavelengths for applications like optical interconnects and 3D hologram devices.
Implementation Method 1
surface plasmons generated at an interface between the metal layer and the semiconductor layer
Implementation Method 2
the first reflector and the second reflector may form a resonant cavity for surface plasmons generated at an interface between the metal layer and the semiconductor layer
Data Source
AI summary
A multi-wavelength surface plasmon laser that simultaneously emits surface plasmons having a large number of wavelengths and includes an active layer whose thickness changes with position, and a metal cavity whose length changes with position so that light of different wavelengths is emitted according to position. Surface plasmons are generated at the interface between a metal layer and a semiconductor layer in response to the light of different wavelengths. The surface plasmons having different wavelengths may be resonated in the metal cavity whose length changes with position and may be emitted to the outside.