Multi-Width Channel Transistor Layout for Mixed-Frequency Operation
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Solution Overview
Problem
Existing semiconductor devices, such as MBC-FETs, face challenges in achieving a balance between high-frequency and low-frequency electrical characteristics, requiring transistors with varying source and drain region volumes to operate effectively across different frequency ranges.
Innovation Solution
The design incorporates multiple channel structures with varying widths and impurity region structures of different volumes, connected by gate structures, allowing for the creation of high-power, low-power, and intermediate performance transistors through selective epitaxial growth, enabling efficient operation across MHz and Hz frequency ranges.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If a single transistor design is used, then manufacturing simplicity is maintained, but electrical characteristics cannot be optimized for both high-frequency and low-frequency operations
Solution Approach 1:
The transistor is divided into multiple independent regions with different impurity concentrations and channel widths. Each region (first, second, and third impurity regions) can be independently designed and manufactured, allowing optimization for different frequency operations while maintaining a unified device structure
Solution Approach 2:
Different regions of the transistor are assigned different local properties: the first impurity region has higher concentration for low-frequency operation, while the second impurity region has lower concentration for high-frequency operation. The channel widths are also locally varied to optimize performance at different frequencies
2Reliability
If larger source and drain regions are used, then low-frequency electrical characteristics are improved, but high-frequency performance deteriorates
Solution Approach 1:
The source and drain regions are segmented into multiple impurity regions with different volumes and concentrations. This allows the transistor to exhibit different effective region sizes depending on the operating frequency, optimizing both low-frequency reliability and high-frequency speed
Solution Approach 2:
The effective source and drain region size dynamically adapts based on operating conditions. At low frequencies, the larger first impurity region dominates, while at high frequencies, the smaller second impurity region becomes more significant, enabling the device to optimize performance across different frequency ranges
3Speed
If smaller source and drain regions are used, then high-frequency electrical characteristics are improved, but low-frequency performance deteriorates
Solution Approach 1:
Multiple impurity regions with different sizes are created, allowing the transistor to effectively utilize the smaller second impurity region for high-frequency operations while the larger first impurity region remains available for low-frequency operations, thus maintaining both speed and reliability across frequency ranges
Solution Approach 2:
The impurity concentration and region volume parameters are varied across different regions. The second impurity region has lower concentration and smaller volume optimized for high-frequency speed, while the first impurity region has higher concentration and larger volume for low-frequency reliability, with both parameters changing progressively across the device structure
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This design enables semiconductor devices to function as high-power/low-power buffers, achieving increased on-currents and operational speed while maintaining consistent electrical characteristics across different frequency ranges.
Implementation Method 1
The design incorporates multiple channel structures with varying widths and impurity region structures of different volumes, connected by gate structures, allowing for the creation of high-power, low-power, and intermediate performance transistors through selective epitaxial growth
Data Source
AI summary
A semiconductor device may include a plurality of first channel structures on a substrate, a plurality of second channel structures on the substrate, a first impurity region structure between the first channel structures, a second impurity region structure between second channel structures, a third impurity region structure between the first and second channel structures, and a plurality of gate structures disposed between the first to third impurity region structures, respectively.Each of the first channel structure may have a first width, and each of the second channel structure may have a second width less than the first width. The first impurity region structure may have a first volume, and the second impurity region structure may have a second volume smaller than the first volume. The third impurity region structure may have a third volume smaller than the first volume and greater than the second volume.