Multi-Width Gate Electrode Structure for Nanostructure Transistors
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Solution Overview
Problem
The semiconductor industry faces challenges in improving processing and manufacturing of integrated circuits (ICs) due to the complexity and scaling down of ICs, which affects production efficiency and costs.
Innovation Solution
A method for manufacturing a semiconductor device structure involving the formation of nanostructure channels using alternating semiconductor layers with different etch selectivity and oxidation rates, followed by precise etching and deposition of gate electrodes to enhance transistor performance and wafer acceptable test (WAT) performance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If geometry size is decreased to increase functional density, then production efficiency and cost are improved, but processing complexity increases
Solution Approach 1:
The gate electrode layer is divided into two distinct portions: a first portion with a first width and a second portion with a second width greater than the first width. This segmentation allows different regions of the gate electrode to serve different functional purposes, enabling improved transistor performance while maintaining scalability for advanced geometry nodes.
Solution Approach 2:
Different portions of the gate electrode layer are given different widths to create local variations in electrical characteristics. The first portion has a narrower width optimized for one function, while the second portion has a wider width optimized for another function, allowing localized optimization without increasing overall device complexity.
2Reliability
If gate electrode space is increased to improve transistor performance, then manufacturing complexity increases
Solution Approach 1:
The gate electrode layer is formed with its non-uniform width profile during the initial deposition process, before subsequent manufacturing steps. This preliminary formation of the differentiated width structure eliminates the need for additional complex processing steps to create the multi-width gate electrode, thereby improving transistor performance without proportionally increasing manufacturing complexity.
Solution Approach 2:
The width parameter of the gate electrode layer is varied across different regions to optimize transistor performance. By changing the geometric parameter (width) of the gate electrode, the invention achieves improved electrical characteristics while using standard deposition processes, avoiding the need for complex multi-step patterning.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method improves transistor electrical performance and WAT performance by increasing the space available for gate electrodes, reducing the risk of electrical shorts, and enhancing the manufacturing process efficiency.
Implementation Method 1
alternating semiconductor layers with different etch selectivity and oxidation rates
Implementation Method 2
alternating semiconductor layers with different etch selectivity and oxidation rates
Data Source
AI summary
Embodiments of the present disclosure provide a semiconductor device structure and methods of forming the same. The structure includes a first semiconductor layer disposed over a substrate, a source/drain region disposed adjacent the first semiconductor layer, a gate spacer disposed over the first semiconductor layer, a native oxide layer disposed between the gate spacer and the source/drain region and between the gate spacer and the first semiconductor layer, a gate dielectric layer disposed between the native oxide layer and the first semiconductor layer, and a gate electrode layer disposed on the gate dielectric layer. The gate electrode layer includes a first portion having a first width and a second portion having a second width greater than the first width.