Multi-Beam Aperture Array Layout for Rim Beamlet Deflection
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Solution Overview
Problem
In multi-beam pattern definition devices, the interaction of charged particle beamlets with the bulk of the opening array device generates secondary particles, leading to charge accumulation and unwanted beamlet deflections due to electric fields, particularly at the rim portion of the aperture array, causing pattern fidelity degradation.
Innovation Solution
The device incorporates additional apertures outside the interlacing region of the aperture array, with corresponding impact regions on the opening array, to form additional beamlets and charge distributions, which extend the electric field and reduce lateral beamlet displacements at the rim portion by creating a broader charging area.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If additional apertures are added to the aperture array device, then the electric field distribution is improved and lateral beamlet displacements are reduced, but the device complexity increases
Solution Approach 1:
The aperture array device is segmented into multiple functional regions: a first region with a first arrangement of apertures and a second region with a second arrangement of apertures. This segmentation allows each region to serve specific purposes in charge distribution and beamlet formation, improving pattern fidelity without requiring complete redesign of the entire aperture array.
Solution Approach 2:
Different regions of the aperture array device are assigned different aperture arrangements tailored to local requirements. The first region has apertures configured to address charge accumulation issues in that specific area, while the second region has apertures optimized for its local characteristics. This local optimization approach improves overall pattern fidelity without uniformly increasing complexity across the entire device.
2Reliability
If the aperture array device comprises multiple regions with different aperture arrangements, then charge accumulation is better managed and beamlet deflections are reduced, but the manufacturing complexity increases
Solution Approach 1:
The aperture array device is divided into manufacturable segments or regions that can be fabricated separately using standard techniques, then assembled into the complete multi-region structure. This segmentation strategy maintains manufacturing ease while achieving the reliability benefits of multiple aperture arrangements for better charge distribution management.
3Manufacturing precision
If additional beamlets are formed through additional apertures, then the charging area is extended and lateral displacements are reduced, but the quantity of particles increases leading to more secondary particle generation
Solution Approach 1:
Additional apertures are strategically placed in specific regions where charge accumulation problems occur, rather than uniformly distributing apertures across the entire device. This local quality approach targets secondary particle generation issues at their source locations, improving beamlet positioning accuracy while minimizing overall secondary particle emission by concentrating additional beamlets only where needed.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration reduces lateral beamlet displacements at the rim portion of the aperture array device, minimizing pattern fidelity issues by distributing the electric field more evenly and reducing deflections.
Implementation Method 1
the interaction of beamlets (of charged particles as mentioned) with the bulk of the opening array device may often cause generation of secondary particles, for example electrons
Implementation Method 2
The accumulated electric charge will generate an electric field which may deflect the (primary) beamlets in the close vicinity
Implementation Method 3
The accumulated electric charge will generate an electric field which may deflect the (primary) beamlets
Data Source
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AI summary
The invention relates to a multi-beam pattern definition device for use in a particle-beam processing or inspection apparatus, said device being adapted to be irradiated with a beam of electrically charged particles and allow passage of the beam through a plurality of apertures thus forming a corresponding number of beamlets, said device comprising an aperture array device in which at least two sets of apertures are realized, an opening array device located downstream of the aperture array device having a plurality of openings configured for the passage of beamlets, said opening array device comprises impact regions, wherein charged impinge upon said impact regions, wherein said plurality of openings in the opening array device are arranged in a substantially regular arrangement, wherein said aperture array device comprises a plurality of additional apertures configured for the passage of charged particles to form additional beamlets, wherein said opening array device comprises additional impact regions, said additional impact regions being located at locations corresponding to the additional apertures of the aperture array device such that charged particles which passed through additional apertures impinge upon additional impact regions.