Multi-Beam Semiconductor Laser Chip Layout for Higher Yield
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Solution Overview
Problem
The yield of multi-beam semiconductor laser devices decreases exponentially with the increase in the number of laser resonators formed in a single chip, making it challenging to achieve high efficiency and reliability.
Innovation Solution
The design involves two edge-emitting semiconductor laser chips, each with multiple laser resonators, where the resonators are arranged orthogonally and adjacently to each other, allowing for improved yield and beam interval management, and can be mounted on a submount with a junction-down method for enhanced cooling and mechanical stability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If a plurality of laser resonators is formed in a single chip, then the number of beams increases, but the yield decreases exponentially
Solution Approach 1:
The patent divides the multi-beam laser system into multiple separate chips, each containing a subset of laser resonators. Instead of integrating all resonators into one chip, the system uses multiple chips with fewer resonators each, thereby improving yield while maintaining the desired number of beams through arrayed configuration of these chips.
2Quantity of substance
If more laser resonators are integrated in one chip, then beam density increases, but manufacturing precision requirements increase
Solution Approach 1:
The patent segments the resonators into smaller groups on separate chips, reducing the number of resonators per chip. This lowers the manufacturing precision requirements for each individual chip while achieving the desired overall beam density through the arrayed configuration of multiple chips with controlled spacing.
Solution Approach 2:
The patent transitions from a two-dimensional integration problem (arranging resonators on a single chip plane) to a three-dimensional solution by stacking multiple chips in an array. This allows beam density to be achieved through spatial arrangement in multiple dimensions rather than forcing all resonators onto a single chip plane.
Data Source
AI summary
A multi-beam semiconductor laser device includes an edge-emitting first semiconductor laser chip and an edge-emitting second semiconductor laser chip. The first semiconductor laser chip and the second semiconductor laser chip are located adjacently to each other in a first direction. The first and second semiconductor laser chips each include a semiconductor substrate and a stacked growth layer including a first conductive cladding layer, a light-emitting layer, and a second conductive cladding layer formed on the semiconductor substrate. The first and second semiconductor laser chips include m (m≥1) and n (n≥1) laser resonators extending in a second direction orthogonal to the first direction, respectively. The m laser resonators of the first semiconductor laser chip are disposed at a position closer to a side where the second semiconductor laser chip is located adjacently than a side where the second semiconductor laser chip is not located adjacently.