Multi-Beam Mark Position Measurement for Precise Pattern Alignment

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Solution Overview

Problem

Existing multi-beam writing methods face challenges in accurately measuring the position of marks due to deflection distortion and beam drift, which affects the precision of pattern alignment and drift correction in semiconductor devices.

Innovation Solution

A method and apparatus that utilize a multi-beam system with controlled beam ON regions to scan marks pseudo-fashion, detecting reflected charged particle signals to calculate and adjust irradiation positions accurately, incorporating a controller and mark position calculator to enhance precision.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Area of stationary object

If multiple beams are used to scan a wide range for mark position measurement, then the measurement coverage is improved, but deflection distortion occurs and beam drift is generated reducing measurement accuracy

Engineering Contradiction:
Improvemeasurement coverage areaVSAvoidmark position measurement accuracy
Core Design Contradiction:
Area of stationary objectVSMeasurement precision

Solution Approach 1:

The multi-beam is divided into multiple independent beam groups that can be selectively activated. Instead of using all beams simultaneously across a wide area, the patent segments the beams and activates only the necessary groups for each measurement phase, reducing deflection distortion while maintaining adequate measurement coverage

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The patent dynamically adjusts which beams are activated (ON/OFF) based on the measurement requirements. The beam activation pattern changes dynamically during the measurement process to optimize between coverage area and measurement precision, avoiding the static approach of using all beams throughout

Inventive Principle:
Principle #15Dynamics

2Measurement precision

If the on-beam region is sequentially shifted to measure different beam positions, then the measurement precision is improved, but the measurement time increases

Engineering Contradiction:
Improvebeam position measurement accuracyVSAvoidmeasurement time
Core Design Contradiction:
Measurement precisionVSLoss of time

Solution Approach 1:

The patent applies partial action by activating only the necessary subset of beams for each measurement phase rather than using all beams continuously. This selective activation reduces the total measurement time while maintaining precision by focusing resources on the critical measurement areas

Inventive Principle:
Principle #16Partial or excessive action

Solution Approach 2:

The beam activation follows a periodic pattern where different beam groups are activated in sequence. This structured periodic activation allows systematic measurement of different beam positions while optimizing the timing to minimize total measurement duration

Inventive Principle:
Principle #19Periodic action

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

Enables high-accuracy measurement of mark positions, reducing deflection distortion and beam drift, thereby improving pattern alignment and reducing mask loss in semiconductor manufacturing.

Implementation Method 1

detecting a reflected charged particle signal from the mark

Methodology Applied
Scientific EffectReflection: Reflection

Implementation Method 2

when a multi-beam is deflected by a deflector to perform scanning

Methodology Applied
Scientific EffectElectromagnetic deflection: Lorentz Force

Data Source

PatentUS12609278B2Multi charged particle beam writing method and multi charged particle beam writing apparatus
Publication Date: 2026.04.21 NUFLARE TECH INC
  • US12609278B2 patent drawing
  • US12609278B2 patent drawing
  • US12609278B2 patent drawing

AI summary

The mark position is measured with a multi-beam with high accuracy. A multi charged particle beam writing method includes forming a multi-beam in which charged particle beams are arranged with a predetermined pitch, irradiating a mark with beams in an on-beam region while shifting irradiation positions of the charged particle beams by sequentially changing the on-beam region in which beams in a partial region of the multi-beam are set to ON, the mark being provided at a predetermined position and having a width greater than the predetermined pitch, detecting a reflected charged particle signal from the mark, and calculating a position of the mark, and adjusting the irradiation positions of the multi-beam based on the calculated position of the mark, and writing a pattern.