Multi-Beam Charged Particle Scanning for High-Throughput Defect Inspection
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Solution Overview
Problem
Current charged-particle systems for inspecting semiconductor IC chips face challenges in improving throughput and detecting micro and nano-scale defects efficiently, as they often require operator intervention and have limitations in scanning large areas effectively.
Innovation Solution
The implementation of a charged-particle system that uses a multi-beam of sub-beams, focused by an objective lens array assembly and controlled by a control lens array, to simultaneously scan and inspect multiple areas of a sample, enhancing throughput and defect detection capabilities.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If a single electron beam is used for inspection, then the system is simpler to operate, but the inspection throughput is lower
Solution Approach 1:
The patent divides a single electron beam into multiple sub-beams using a beam splitter assembly, allowing parallel inspection of multiple areas simultaneously. This segmentation enables higher throughput while maintaining manageable system complexity through modular design of the beam splitting and scanning components.
Solution Approach 2:
The patent combines multiple sub-beams into a multi-beam system that operates in unison to inspect different regions of the substrate concurrently. By merging the functionality of multiple beams under coordinated control, the system achieves high throughput inspection without proportionally increasing operational complexity.
2Area of stationary object
If a multi-beam system is used to inspect large areas, then the inspection coverage is improved, but the system complexity increases
Solution Approach 1:
The patent extends the inspection capability from single-point or line scanning to two-dimensional area coverage by deploying multiple sub-beams that can be independently positioned and scanned across different regions of the substrate, enabling comprehensive large-area inspection.
Solution Approach 2:
The patent employs dynamic scanning mechanisms that allow sub-beams to be rapidly repositioned and redirected during operation, enabling flexible coverage of large substrate areas while maintaining efficient inspection speeds through coordinated motion control.
3Measurement precision
If high energy electron beam is used, then the detection capability is improved, but the sample damage risk increases
Solution Approach 1:
The patent uses pulsed or periodically modulated electron beam delivery, allowing high-energy beams to be applied in controlled intervals with sufficient cooling time between pulses, thereby maintaining defect detection sensitivity while reducing cumulative thermal damage to the substrate.
Solution Approach 2:
The patent applies different beam energies and intensities to different regions of the substrate based on local inspection requirements, using higher energy beams only where needed for sensitive defect detection while using lower energy beams in other areas to minimize damage risk.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach allows for high-speed inspection of large areas with improved defect detection, increasing the overall yield and reducing the need for operator intervention, thereby enhancing the efficiency and accuracy of semiconductor manufacturing processes.
Implementation Method 1
an objective lens array assembly and controlled by a control lens array, to simultaneously scan and inspect multiple areas of a sample
Implementation Method 2
The interactions between the material structure at the probing spot and the landing electrons from the beam of electrons cause electrons to be emitted from the surface, such as secondary electrons, backscattered electrons or Auger electrons
Implementation Method 3
The interactions between the material structure at the probing spot and the landing electrons from the beam of electrons cause electrons to be emitted from the surface, such as secondary electrons, backscattered electrons or Auger electrons
Data Source
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AI summary
Charged particle systems and methods for processing a sample using a multi-beam of charged particles are disclosed. In one arrangement, a column directs a multi-beam of sub-beams of charged particles onto a sample surface of a sample. A sample is moved in a direction parallel to a first direction while the column is used to repeatedly scan the multi-beam over the sample surface in a direction parallel to a second direction. An elongate region on the sample surface is thus processed with each sub-beam. The sample is displaced in a direction oblique or perpendicular to the first direction. The process is repeated to process further elongate regions with each sub-beam. The resulting plurality of processed elongate regions define a sub-beam processed area for each sub-beam.