Multibit Cantilever Memory With Contact Part

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Solution Overview

Problem

Conventional memory devices face challenges such as high power consumption, limited integration due to parallel configuration of cantilever and FET sensors, and inability to store multibit data, requiring high voltage for cantilever electrode operation and separate configuration of attractive and FET sensors.

Innovation Solution

A multibit electro-mechanical memory device is designed with cantilever electrodes that can be curved and maintained in a curved state using a lower voltage, featuring a contact part that reduces the curved distance and integrates the attractive electrode with the FET sensor, allowing for a matrix type cell array and storage of 2 bits or more per unit cell.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Use of energy by moving object

If a conventional memory device uses a cantilever electrode with a long curved distance to achieve contact with the attractive electrode, then the switching operation can be achieved, but the power consumption increases due to high voltage requirement

Engineering Contradiction:
Improvepower consumptionVSAvoidcurved distance of cantilever electrode
Core Design Contradiction:
Use of energy by moving objectVSLength of moving object

Solution Approach 1:

The patent introduces a contact part that protrudes from the end of the cantilever electrode in the third direction (vertical direction), creating a three-dimensional contact structure. This dimensional change allows the contact part to reach the attractive electrode or lower word line without requiring the entire cantilever electrode to curve a long distance, thereby reducing the curved distance and power consumption while maintaining the switching function

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

2Productivity

If the cantilever electrode and FET sensor are configured separately in parallel, then the sensor function can be achieved, but the device integration is limited

Engineering Contradiction:
Improvedevice integrationVSAvoidseparate configuration of sensors
Core Design Contradiction:
ProductivityVSDevice complexity

Solution Approach 1:

The patent merges the attractive electrode and FET sensor into a unified structure where the lower word line serves dual functions as both the attractive electrode for cantilever actuation and the FET gate electrode for sensing. This integration eliminates the need for separate parallel configurations, increases device integration density, and simplifies the overall device structure while maintaining both actuation and sensing functions

Inventive Principle:
Principle #5Merging (Combining)

3Ease of operation

If high voltage is applied to curve the cantilever electrode for contact, then the switching operation can be achieved, but the power consumption increases

Engineering Contradiction:
Improveswitching operationVSAvoidpower consumption
Core Design Contradiction:
Ease of operationVSUse of energy by moving object

Solution Approach 1:

The patent segments the cantilever electrode structure by adding a contact part as a distinct protruding element at the end of the cantilever electrode. This segmentation allows the contact part to be positioned closer to the target electrode, reducing the required curvature radius and voltage for switching operation, thereby enabling low-voltage switching while maintaining operational ease

Inventive Principle:
Principle #1Segmentation

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The solution reduces power consumption, increases memory device integration, and enables the storage of multiple bits per unit cell by using a contact part to shorten the curved distance of cantilever electrodes and unify the attractive and FET sensor functions, while maintaining the curved state without high voltage.

Implementation Method 1

curved in a third direction that is vertical with respect to the first and second direction by an electrical field induced by a first charge applied to the lower word line

Methodology Applied
Scientific EffectElectric field: Electric Field

Implementation Method 2

a contact part that concentrates a second charge induced from the cantilever electrode in response to the first charge applied to the lower word line and the trap site

Methodology Applied
Scientific EffectCharge concentration: Electrostatic Induction

Data Source

PatentUS7791936B2Multibit electro-mechanical memory device and method of manufacturing the same
Publication Date: 2010.09.07 SAMSUNG ELECTRONICS CO LTD
  • US7791936B2 patent drawing
  • US7791936B2 patent drawing
  • US7791936B2 patent drawing

AI summary

A multibit electro-mechanical memory device and a method of manufacturing the same include a substrate, a bit line on the substrate; a lower word line and a trap site isolated from the bit line, a pad electrode isolated from a sidewall of the trap site and the lower word line and connected to the bit line, a cantilever electrode suspended over a lower void in an upper part of the trap site, and connected to the pad electrode and curved by an electrical field induced by a charge applied to the lower word line, a contact part for concentrating a charge induced from the cantilever electrode thereon in response to the charge applied from the lower word line and the trap site, the contact part protruding from an end part of the cantilever electrode, and an upper word line formed with an upper void above the cantilever electrode.