Multicathode PVD Chamber with Straight Lower Shield
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Solution Overview
Problem
Current physical vapor deposition (PVD) systems face challenges in reducing particle generation and improving temperature control, particularly in the lower shield of the chamber, which can lead to defects during the manufacturing of semiconductor integrated circuits and extreme ultraviolet (EUV) mask blanks.
Innovation Solution
A PVD chamber design featuring multiple cathode assemblies, an upper shield with shield holes, and a lower shield with a straight inner surface and heating elements adjacent to the lower shield to minimize particle accumulation and enhance temperature control, including a voltage trap to capture particles and maintain optimal temperature.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If high power density PVD sputtering with high magnetic fields and high DC power is used, then sputtering rate is enhanced, but target surface temperature rises significantly
Solution Approach 1:
The chamber is divided into multiple zones with separate cathode assemblies (e.g., four cathodes) that can be independently controlled. This segmentation allows the sputtering process to be distributed across multiple targets, reducing the power density and heat generation on any single target while maintaining overall high productivity through parallel deposition.
2Object-generated harmful factors
If conventional lower shield design with bends is used, then particle accumulation occurs on shield surfaces, but if straight region is implemented, then particle accumulation is reduced
Solution Approach 1:
Instead of using the conventional bent shield geometry that creates particle traps, the invention inverts the approach by implementing a straight lower shield wall. This inversion of the traditional design eliminates the bends that cause particle accumulation, allowing particles to be swept away by gas flow rather than being trapped on shield surfaces.
3Productivity
If multiple cathode assemblies are used, then deposition capability is enhanced, but chamber complexity increases
Solution Approach 1:
The multiple cathode assemblies are designed with universal characteristics, allowing each cathode to perform the same sputtering function. This multi-functionality enables flexible deposition sequences and material layering while using standardized components, thereby enhancing deposition capability without proportionally increasing overall system complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The design effectively reduces particle defects and improves temperature control within the PVD chamber, ensuring higher quality deposits and stability during the fabrication of EUV mask blanks and semiconductor materials.
Implementation Method 1
one or more heating elements adjacent to the lower shield
Implementation Method 2
Sputtering, alternatively called physical vapor deposition (PVD), is used for the deposition of metals and related materials
Implementation Method 3
two magnets of opposing poles magnetically coupled at their back through a magnetic yoke to project a magnetic field into the processing space to increase the density of the plasma and enhance the sputtering rate
Implementation Method 4
The sputtering target is cooled by contacting a target backing plate with cooling fluid
Data Source
AI summary
A physical vapor deposition (PVD) chamber and a method of operation thereof are disclosed. Chambers and methods are described that provide a chamber comprising one or more of contours that reduce particle defects, temperature control and or measurement and and/or voltage particle traps to reduce processing defects.