Multichannel Active Pattern Height Variation for Gate Control
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Solution Overview
Problem
Current multi-gate transistors face challenges in effectively managing short channel effects and improving control capabilities without increasing gate length, which limits the integration density and performance of semiconductor devices.
Innovation Solution
The semiconductor device incorporates multiple active patterns with distinct channel regions and gate structures, featuring different heights and insulating films to optimize channel widths and control, allowing for improved control over channel regions and reduced short channel effects.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If multi-gate transistors are used to increase integration density, then device integration density is improved, but control capability over channel regions deteriorates
Solution Approach 1:
The active pattern is divided into multiple segments with different heights, creating distinct channel regions (first channel region with greater height, second channel region with lesser height). Each segment can be independently controlled by separate gate structures, allowing precise control over current flow while maintaining high integration density through the multi-gate configuration.
Solution Approach 2:
Different portions of the active pattern are given different heights to create localized variations in channel properties. The first channel region has greater height for higher current capacity, while the second channel region has lesser height for better control, allowing each region to be optimized for its specific function within the overall device.
2Reliability
If gate length is increased to improve control capability, then control over channel regions is improved, but integration density deteriorates
Solution Approach 1:
Instead of increasing gate length in the planar dimension, the invention utilizes the vertical dimension by creating active patterns with different heights. This three-dimensional approach allows control capability to be enhanced through height variation rather than length extension, thereby maintaining high integration density while achieving improved control over channel regions.
Solution Approach 2:
The gate structure is segmented into multiple gates that control different height regions independently. This allows each gate to control its specific channel region effectively without requiring an overall increase in gate length, thus maintaining compact device dimensions and high integration density.
3Ease of manufacture
If uniform channel regions are used, then manufacturing is simplified, but short channel effects increase
Solution Approach 1:
The channel regions are designed with different heights to create local quality variations. The first channel region with greater height provides better electrostatic control and reduces short channel effects, while the second channel region with lesser height can be optimized for other performance parameters. This localized differentiation allows effective SCE suppression while maintaining reasonable manufacturing complexity.
4Reliability
If different channel widths are implemented to optimize control, then device performance is improved, but device complexity increases
Solution Approach 1:
The active pattern employs asymmetric height design where the first channel region has greater height than the second channel region. This asymmetric configuration naturally creates different effective channel widths and control characteristics without requiring complex additional structures, thereby improving device performance while limiting the increase in overall device complexity.
Data Source
AI summary
A semiconductor device is provided, which includes a first and second multichannel active patterns spaced apart from one another and extending in a first direction. The semiconductor device also includes first and second gate structures on the first and second multichannel active patterns, extending in a second direction and including first and second gate insulating films, respectively. Sidewalls of the first multichannel active pattern include first portions in contact with the first gate insulating film, second portions not in contact with the first gate insulating film, third portions in contact with the second gate insulating film, and fourth portions not in contact with the second gate insulating film. Additionally, a height of the first portions of the first multichannel active pattern is greater than a height of the third portions of the first multichannel active pattern.